Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin-phonon interactions

被引:0
|
作者
Rongione, E. [1 ,2 ]
Gueckstock, O. [3 ]
Mattern, M. [4 ]
Gomonay, O. [5 ]
Meer, H. [5 ]
Schmitt, C. [5 ]
Ramos, R. [6 ]
Kikkawa, T. [7 ]
Micica, M. [2 ]
Saitoh, E. [6 ]
Sinova, J. [5 ]
Jaffres, H. [1 ]
Mangeney, J. [2 ]
Goennenwein, S. T. B. [8 ]
Gepraegs, S. [9 ]
Kampfrath, T. [3 ]
Klaeui, M. [5 ]
Bargheer, M. [4 ]
Seifert, T. S. [3 ]
Dhillon, S. [2 ]
Lebrun, R. [1 ]
机构
[1] Univ Paris Saclay, CNRS, Unite Mixte Phys, F-91767 Palaiseau, France
[2] Univ Paris Cite, Univ PSL, Sorbonne Univ, CNRS,Lab Phys,Ecole Normal Super, F-75005 Paris, France
[3] Free Univ Berlin, Inst Phys, D-14195 Berlin, Germany
[4] Univ Potsdam, Inst Phys & Astron, D-14476 Potsdam, Germany
[5] Johannes Gutenberg Univ Mainz, Inst Phys, D-55128 Mainz, Germany
[6] Tohoku Univ, WPI Adv Inst Mat Res, J-9808577 Sendai, Miyagi, Japan
[7] Univ Tokyo, Dept Appl Phys, J-1138656 Tokyo, Japan
[8] Univ Konstanz, Dept Phys, D-78457 Constance, Germany
[9] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany
关键词
D O I
10.1109/IRMMW-THz57677.2023.10299196
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Antiferromagnetic (AFM) materials have been proposed for new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Although manipulating coherently their spin dynamics remains a key challenge, this can be potentially accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowband (coherent) magnons at 1 THz in ultra-thin films of AFM - heavy metal (NiO/Pt). We show, experimentally and through modeling, two excitation processes of the spin dynamics in NiO, an off-resonant instantaneous optical spin torque in (111) oriented films and a strain-wave induced THz torque induced by ultrafast Pt excitation in (001) oriented films. Both phenomena lead to THz emission through the inverse spin Hall effect in the adjacent heavy metal layer, opening new routes towards the development of fast opto-spintronic devices based on AFM materials.
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页数:2
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