Study of Lithographic Parameters for the Trilayer Resist Systems in Electron Beam Lithography

This paper focus on electron beam lithography (EBL) experimental investigation and simulation of single/multilayer resists for pattern transfer. Important EBL process parameters such as solubility rates, resolution, absorbed energy in the pattern concerning investigated single and trilayer PMMA and HSQ resist systems are studied and discussed. The novelty of the presented approach is in that the bottom layer of HSQ is not etched in plasma, however developed after the middle layer etching. The calculated energy deposition distribution in the top resist layers for single and trilayer PMMA and HSQ systems shows the advantage of the studied trilayer PMMA and HSQ systems due to the reduced contribution of the forward and backscattered electrons.