Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot

被引:7
|
作者
Millington-Hotze, Peter [1 ]
Manna, Santanu [2 ,3 ]
da Silva, Saimon F. Covre [2 ]
Rastelli, Armando [2 ]
Chekhovich, Evgeny A. [1 ]
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, England
[2] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, Altenberger Str 69, A-4040 Linz, Austria
[3] Indian Inst Technol Delhi, Dept Elect Engn, New Delhi 110016, India
基金
奥地利科学基金会; 英国工程与自然科学研究理事会;
关键词
ENHANCED NMR-SPECTROSCOPY; LATTICE-RELAXATION; POLARIZATION; GAAS; SEGREGATION; WELLS;
D O I
10.1038/s41467-023-38349-0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The spin diffusion concept provides a classical description of a purely quantum-mechanical evolution in inhomogeneously polarized many-body systems such as nuclear spin lattices. The central spin of a localized electron alters nuclear spin diffusion in a way that is still poorly understood. Here, spin diffusion in a single GaAs/AlGaAs quantum dot is witnessed in the most direct manner from oscillatory spin relaxation dynamics. Electron spin is found to accelerate nuclear spin relaxation, from which we conclude that the long-discussed concept of a Knight-field-gradient diffusion barrier does not apply to GaAs epitaxial quantum dots. Our experiments distinguish between non-diffusion relaxation and spin diffusion, allowing us to conclude that diffusion is accelerated by the central electron spin. Such acceleration is observed up to unexpectedly high magnetic fields - we propose electron spin-flip fluctuations as an explanation. Diffusion-limited nuclear spin lifetimes range between 1 and 10 s, which is sufficiently long for quantum information storage and processing. Interaction between localized electron spins and nuclear spins causes shifts in nuclear spin energy levels, but how this affects nuclear spin diffusion in quantum dots is not fully understood. Here the authors show that the central electron accelerates nuclear spin diffusion in GaAs/AlGaAs quantum dots.
引用
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页数:10
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