Research and Progress of High-Power Semiconductor Lasers with High Beam Quality

被引:0
|
作者
Chen Fen [1 ]
Cui Bifeng [1 ]
Feng Jingyu [1 ]
Zheng Xiangrui [1 ]
Chen Zhongbiao [1 ]
机构
[1] Beijing Univ Technol, Fac Informat Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
关键词
diode laser; semiconductor laser; lateral beam quality; lateral mode control method; BRIGHTNESS; DIODES; PERFORMANCE; OUTPUT;
D O I
10.3788/LOP222510
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Semiconductor lasers can be applied as ideal laser sources toward the development of laser and sensing technologies. For laser radar measurement, optical pumping, and fiber coupling, semiconductor lasers must have high power and high beam quality. The design of high- power semiconductor lasers promotes the easy production of multi-mode beams in the lateral direction, which decreases the lateral beam quality. Hence, the limitations induced by the lateral mode and the enhancement of the lateral beam quality of high- power semiconductor lasers have become important research topics. This paper focuses on three topics: the tapered laser, the method for the improvement of the lateral beam quality of a broad- area semiconductor laser, and the package structure of a semiconductor laser. Furthermore, the results and progress of domestic and international research on the control of the lateral beam quality are reviewed.
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页数:10
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共 47 条
  • [1] Twin-Contact 645-nm Tapered Laser With 500-mW Output Power
    Adamiec, Pawel
    Sumpf, Bernd
    Feise, David
    Hasler, Karl-Heinz
    Ressel, Peter
    Wenzel, Hans
    Zorn, Martin
    Weyers, Markus
    Erbert, Goetz
    Traenkle, Guenther
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (1-4) : 236 - 238
  • [2] Mitigation of Thermal Lensing Effect as a Brightness Limitation of High-Power Broad Area Diode Lasers
    Bai, John G.
    Leisher, Paul
    Zhang, Shiguo
    Elim, Sandrio
    Grimshaw, Mike
    Bai, Chendong
    Bintz, Lou
    Dawson, David
    Bao, Ling
    Wang, Jun
    DeVito, Mark
    Martinsen, Rob
    Haden, Jim
    [J]. NOVEL IN-PLANE SEMICONDUCTOR LASERS X, 2011, 7953
  • [3] Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers
    Bo, BX
    Gao, X
    Wang, L
    Li, H
    Qu, Y
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (05) : 1248 - 1249
  • [4] [蔡元红 Cai Yuanhong], 2021, [发光学报, Chinese Journal of Luminescence], V42, P518
  • [5] [常奕栋 Chang Yidong], 2021, [发光学报, Chinese Journal of Luminescence], V42, P1040
  • [6] Stabilization of lateral mode transients in high-power broad area semiconductor lasers
    Chen, Chen
    Leisher, Paul
    Patterson, Steve
    Crump, Paul
    Kim, Yong Kwan
    Choquette, Kent
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (01)
  • [7] Control of optical mode distribution through etched microstructures for improved broad area laser performance
    Crump, P.
    Leisher, P.
    Matson, T.
    Anderson, V.
    Schulte, D.
    Bell, J.
    Farmer, J.
    DeVito, M.
    Martinsen, R.
    Kim, Y. K.
    Choquette, K. D.
    Erbert, G.
    Traenkle, G.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (13)
  • [8] [戴玮 Dai Wei], 2019, [光电子·激光, Journal of Optoelectronics·Laser], V30, P227
  • [9] Huang S S, 2017, Chinese Physics Letters, V24, P66
  • [10] Enhanced power conversion efficiency in 900-nm range single emitter broad stripe laser diodes maintaining high power operability
    Kaifuchi, Yoshikazu
    Yoshida, Kyohei
    Yamagata, Yuji
    Nogawa, Ryozaburo
    Yamada, Yumi
    Yamaguchi, Masayuki
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY XVII, 2019, 10900