All-solid integratable device of electric field control of magnetism based on hydrogen ion migration in La1-xSrxMnO3

Field-effect transistors based on semiconductor integration technology have come to a bottleneck, while electric field control of magnetism has great potential for applications in next-generation magnetic memory and calculators based on electron spins. Magnetic properties manipulation from a mechanism of ion migration driven by an electric field has the advantages of low energy consumption, nonvolatility, reproducibility, and durability. Here, we introduce a solid-state integratable hydrogen ion storage electrolyte silicon phosphate as the gate to achieve reversible control of magnetoresistance, magnetism, and magnetic interaction in the La1-xSrxMnO3/SrTiO3 ferromagnetic system. The controllable double-exchange interaction and spin scattering mechanism sketch the theoretical physical picture for these results. This work is expected to open up additional opportunities in the translation of electric control of magnetism into practical applications.