A 9-Mb HZO-Based Embedded FeRAM With 1012-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

被引：5

作者：

Wu, Qiqiao ^{[1
,2
]}

Cao, Yue ^{[3
]}

Luo, Qing ^{[1
,2
,4
,5
]}

Jiang, Haijun ^{[3
]}

Han, Zhongze ^{[4
,5
]}

Han, Yongkang ^{[3
]}

Dou, Chunmeng ^{[4
,5
]}

Lv, Hangbing ^{[4
,5
]}

Liu, Qi

Yang, Jianguo ^{[4
,5
]}

Liu, Ming ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100017, Peoples R China

[2] Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200437, Peoples R China

[3] Zhangjiang Lab, Shanghai 201210, Peoples R China

[4] Chinese Acad Sci, Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100017, Peoples R China

[5] Univ Chinese Acad Sci, Sch Microelect, Beijing 101408, Peoples R China

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2024年 / 59卷 / 01期

关键词：

Ferroelectric capacitor (FeCAP); ferroelectric random access memory (FeRAM); embedded nonvolatile memory (eNVM); refresh; sense amplifier (SA); write driver; CHAIN FERAM; HIGH-SPEED; BITLINE; MB;

D O I：

10.1109/JSSC.2023.3320659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hf0.5Zr0.5O2(HZO)-based ferroelectric random access memory (FeRAM) is a good candidate for the embedded nonvolatile memory (eNVM) applications because of its high reliability, high speed, good scalability, and process compatibility with logic large-scale integrated circuits (LSIs). However, chal-lenges still exist in designing robust read/write circuits for high reliability and sufficient read yield. This work presents a 9-Mb(8+1-Mb error correcting code (ECC)) HZO-based nonvolatile FeRAM chip with high-performance read and write peripheral circuits. A TiN/HZO/TiN ferroelectric capacitor (FeCAP) is integrated in the back-end-of-line of a 130-nm CMOS process with a 700-nm-diameter capacitor and a mega-level capacity.A temperature-aware ECC-assisted write driver (ECC-WD)is designed to improve the reliability and power efficiency of FeRAM. The offset-canceled sense amplifier (SA) and adummy-based reference generator are designed to tolerate asmall bitline (BL) signal margin and to reduce the read bit-errorrate (BER). Measurement results show 2xremnant polarization(P-r)>30 mu C/cm(2),>10(12)-cycle endurance, 7-ns write and 5-nsread time, sub-3-V operating voltage, and 10-year data retentionat 85(degrees)C

引用

页码：208 / 218

页数：11