High-efficiency mid-infrared on-chip silicon grating couplers for perfectly vertical coupling

被引:7
|
作者
Liu, Y. U. H. E. N. G. [1 ]
Xia, L. I. P. E. N. G. [1 ]
LI, T. I. N. G. [1 ]
Sun, Y. U. H. A. N. [1 ]
Zhou, P. E. I. J. I. [1 ]
Shen, L., I [2 ,3 ]
Zou, Yi [1 ,4 ]
机构
[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
[4] Shanghai Engn Res Ctr Energy Efficient & Custom AI, Shanghai 201210, Peoples R China
基金
上海市自然科学基金; 中国国家自然科学基金;
关键词
WAVE-GUIDES; HIGH-PERFORMANCE; PHOTONICS;
D O I
10.1364/OL.478751
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present, to our knowledge, the first experimental demonstration of two on-chip gratings for perfectly vertical coupling at wavelengths of 3350 nm and 3550 nm, respectively. An anti-backreflection unit containing a fully etched trench and a subwavelength pillar is introduced in each grating period, together with a binary-approximated blazed unit, interleaving fully and shallow-etched slots in 500-nm thick silicon film. Both gratings show a strong ability to eliminate backreflection and provide predicted directionality of around 80%. The physical theoretical analysis is applied during further apodization for mitigating the computation of the optimization algorithm, improving the efficiency and optimization reliability, and increasing the fabrication robustness. The measured coupling efficiencies (CEs) of the gratings are -5.58 dB and -4.34 dB at wavelengths of 3350 nm and 3550 nm, with a 3-dB bandwidth of at least 87 nm and 210 nm, respectively.(c) 2023 Optica Publishing Group
引用
收藏
页码:239 / 242
页数:4
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