共 50 条
- [1] Atomic layer etching of gallium nitride (0001) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (06):
- [2] Atomic-Scale Etching Mechanism of Aluminum with Fluorine-Based Plasma [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (33): : 14180 - 14186
- [4] Selective plasma etching for contact holes using a fluorine-based chemistry with addition of N2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2644 - 2647
- [5] CHEMICAL PROCESSES IN FLUORINE-BASED ETCHING REACTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 879 - 880
- [6] Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (02):
- [8] Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (04):
- [9] Fluorine-based inductively coupled plasma etching of ZnO film [J]. JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2011, 21 (06): : 230 - 234