Spin injection into heavily-doped n-GaN via Schottky barrier

被引：1

作者：

Sun, Zhenhao ^{[1
]}

Tang, Ning ^{[1
,2
,3
]}

Chen, Shuaiyu ^{[1
]}

Zhang, Fan ^{[4
]}

Fan, Haoran ^{[5
]}

Zhang, Shixiong ^{[1
]}

Wang, Rongxin ^{[4
]}

Lin, Xi ^{[5
]}

Liu, Jianping ^{[4
]}

Ge, Weikun ^{[1
]}

Shen, Bo ^{[1
,2
,3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop Ph, Beijing 100871, Peoples R China

[2] Peking Univ, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China

[3] Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[4] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Suzhou 215123, Peoples R China

[5] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2023年 / 44卷 / 08期

基金：

中国国家自然科学基金;

关键词：

GaN; spin injection; Schottky barrier; magnetoresistance; ELECTRICAL DETECTION; FERROMAGNETIC METAL; ROOM-TEMPERATURE; PRECESSION; ACCUMULATION; TRANSPORT;

D O I：

10.1088/1674-4926/44/8/082501

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states.

引用

页数：5

共 50 条

[1] Spin injection into heavily-doped n-GaN via Schottky barrier
Zhenhao Sun
Ning Tang
Shuaiyu Chen
Fan Zhang
Haoran Fan
Shixiong Zhang
Rongxin Wang
Xi Lin
Jianping Liu
Weikun Ge
Bo Shen
Journal of Semiconductors, 2023, 44 (08) : 70 - 74
[2] Spin injection into heavily-doped n-GaN via Schottky barrier
Zhenhao Sun
Ning Tang
Shuaiyu Chen
Fan Zhang
Haoran Fan
Shixiong Zhang
Rongxin Wang
Xi Lin
Jianping Liu
Weikun Ge
Bo Shen
Journal of Semiconductors, 2023, (08) : 70 - 74
[3] HEIGHT OF A SCHOTTKY-BARRIER WITH A THIN, HEAVILY-DOPED SEMICONDUCTOR LAYER
CHIKUN, VV
SEMICONDUCTORS, 1995, 29 (03) : 291 - 292
[4] Studies on the Thermal Stability of Ni/n-GaN and Pt/n-GaN Schottky Barrier Diodes
Kumar, Ashish
Mahajan, Somna
Vinayak, Seema
Singh, R.
MATERIALS RESEARCH EXPRESS, 2016, 3 (08):
[5] A methane sensitive Ni/n-GaN Schottky barrier sensor
Hudeish, A. Y.
Aziz, A. Abdul
Hassan, Z.
Tan, C. K.
Abu Hassan, H.
Ibrahim, K.
2005 Asian Conference on Sensors and the International Conference on New Techniques in Pharmaceutical and Biomedical Research, Proceedings, 2005, : 127 - 129
[6] Photoelectric characteristics of PtSi-Si Schottky barrier with boron heavily-doped nanolayer
Voitsekhovskii, AV
Kokhanenko, AP
Korotaev, AG
Nesmelov, SN
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 2001, 4413 : 387 - 390
[7] CrB2 Schottky barrier contacts on n-GaN
Khanna, R
Pearton, SJ
Ren, F
Kravchenko, I
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (11) : G804 - G807
[8] Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode
Maeda, Takuya
Okada, Masaya
Ueno, Masaki
Yamamoto, Yoshiyuki
Kimoto, Tsunenobu
Horita, Masahiro
Suda, Jun
APPLIED PHYSICS EXPRESS, 2017, 10 (05)
[9] Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
Parish, G.
Kennedy, R. A.
Umana-Membreno, G. A.
Nener, B. D.
SOLID-STATE ELECTRONICS, 2008, 52 (02) : 171 - 174
[10] Performance Analysis of a Pt/n-GaN Schottky Barrier UV Detector
F. Bouzid
L. Dehimi
F. Pezzimenti
Journal of Electronic Materials, 2017, 46 : 6563 - 6570

← 1 2 3 4 5 →