Highly Reversible Molecular Photoswitches with Transition Metal Dichalcogenides Electrodes

被引:2
|
作者
Chen, Li-Chuan [1 ,2 ]
Shi, Jie [1 ,2 ]
Lu, Zhi-Xing [1 ,2 ]
Lin, Rong-Jian [1 ,2 ]
Lu, Tai-Ge [1 ,2 ]
Zou, Yu-Ling [1 ,2 ]
Liang, Qing-Man [1 ,2 ]
Huang, Ruiyun [1 ,2 ]
Shi, Jia [1 ,2 ]
Xiao, Zong-Yuan [1 ,2 ]
Zhang, Yanxi [1 ,2 ]
Liu, Junyang [1 ,2 ]
Yang, Yang [1 ,2 ]
Hong, Wenjing [1 ,2 ]
机构
[1] Xiamen Univ, Coll Chem & Chem Engn, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Pen Tung Sah Inst Micronano Sci & Technol, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
EGaIn technique; molecule-electrode coupling; molecular photoswitch; self-assembled monolayer; transition metal dichalcogenides; RECTIFICATION RATIOS; GRAPHENE; TRANSPARENT; JUNCTIONS; CONTACTS; DIODES; FILMS; MOS2;
D O I
10.1002/smll.202305607
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The molecule-electrode coupling plays an essential role in photoresponsive devices with photochromic molecules, and the strong coupling between the molecule and the conventional electrodes leads to/ the quenching effect and limits the reversibility of molecular photoswitches. In this work, we developed a strategy of using transition metal dichalcogenides (TMDCs) electrodes to fabricate the thiol azobenzene (TAB) self-assembled monolayers (SAMs) junctions with the eutectic gallium-indium (EGaIn) technique. The current-voltage characteristics of the EGaIn/GaOx//TAB/TMDCs photoswitches showed an almost 100% reversible photoswitching behavior, which increased by similar to 28% compared to EGaIn/GaOx//TAB/AuTS photoswitches. Density functional theory (DFT) calculations showed the coupling strength of the TAB-TMDCs electrode decreased by 42% compared to that of the TAB-AuTS electrode, giving rise to improved reversibility. our work demonstrated the feasibility of 2D TMDCs for fabricating SAMs-based photoswitches with unprecedentedly high reversibility. A strategy for fabricating molecular photoswitch devices with the combined self-assembled monolayers and eutectic gallium-indium techniques is reported. The current-voltage characteristics of EGaIn/GaOx//molecule/TMDCs photoswitches exhibit reversibility as excellent as almost 100%. This work demonstrates the promise of transition metal dichalcogenides electrodes (TMDCs) to express the intrinsic molecular properties and opens a new path for the design and fabrication nanoelectronic devices.image
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页数:8
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