Topological Hall effect in CeAlGe

被引:2
|
作者
Piva, M. M. [1 ]
Souza, J. C. [1 ,2 ,5 ]
Lombardi, G. A. [2 ,3 ]
Pakuszewski, K. R. [2 ]
Adriano, C. [2 ]
Pagliuso, P. G. [2 ,4 ]
Nicklas, M. [1 ]
机构
[1] Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany
[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP, Brazil
[3] Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Synchrotron Light Lab LNLS, BR-13083970 Campinas, SP, Brazil
[4] Las Alamos Natl Lab, Los Alamos, NM 87545 USA
[5] WeizInstitute Sci, Dept Condensed Matter Phys, Rehovot, Israel
基金
巴西圣保罗研究基金会; 欧盟地平线“2020”;
关键词
Cerium compounds - Domain walls - Electronic properties - Germanium alloys - Hall effect - Tellurium compounds - Topology;
D O I
10.1103/PhysRevMaterials.7.074204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Weyl semimetal CeAlGe is a promising material to study nontrivial topologies in real and momentum space due to the presence of a topological magnetic phase. Our results at ambient pressure show that the electronic properties of CeAlGe are extremely sensitive to small stoichiometric variations. In particular, the topological Hall effect (THE) present in CeAlGe is absent in some samples of almost identical chemical composition. The application of external pressure favors the antiferromagnetic ground state. It also induces a THE where it was not visible at ambient pressure. Furthermore, a small pressure is sufficient to drive the single region of the THE in magnetic fields into two different ones. Our results reveal an extreme sensitivity of the electronic properties of CeAlGe to tiny changes in its chemical composition, leading to a high tunability by external stimuli. We can relate this sensitivity to a shift in the Fermi level and to domain walls.
引用
收藏
页数:8
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