Non-linear optical properties of Sb doped InSe4 chalcogenide films for optical switching applications

The present research work emphases on the laser-induced third-order optical nonlinearity in Sb-doped In-Se chalcogenide glassy semiconducting films, utilizing the Z-scan measurement at a wavelength of 800 nm. The semi-crystalline behaviour of the doped films is caused by nucleation growth. As a light source, the mode-locked femtosecond Ti: Sapphire laser is used to calculate the non-linear index of refraction (n(2)), intensity-dependent absorption coefficient, and non-linear susceptibility using the Z-scan method. The all-optical switches operating at 1330 nm and 1550 nm telecommunication wavelengths would be anticipated to utilize materials with a low non-linear absorption coefficient (beta) and a high non-linear refractive index (n(2)).