Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction

被引:3
|
作者
Yu, Shujie [1 ,2 ]
Chen, Lei [1 ,2 ]
Pan, Yinping [1 ]
Wang, Yue [1 ,2 ]
Zhang, Denghui [1 ,2 ]
Wu, Guangting [1 ,2 ]
Fan, Xinxin [1 ,2 ]
Liu, Xiaoyu [1 ]
Wu, Ling [1 ]
Zhang, Lu [1 ,2 ]
Peng, Wei [1 ,2 ]
Ren, Jie [1 ,2 ]
Wang, Zhen [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
基金
中国国家自然科学基金;
关键词
Josephson junction; Gate voltage; Criticalcurrent; 3D nanobridge junction; ELECTRIC-FIELD; SUPERCURRENT;
D O I
10.1021/acs.nanolett.3c02015
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recent studies have shown that the critical currentsof severalmetallic superconducting nanowires and Dayem bridges can be locallytuned by using a gate voltage (V (g)). Here,we report a gate-tunable Josephson junction structure constructedfrom a three-dimensional (3D) niobium nanobridge junction (NBJ) witha voltage gate on top. Measurements up to 6 K showed that the criticalcurrent of this structure can be tuned to zero by increasing V (g). The critical gate voltage was reduced to16 V and may possibly be reduced further by reducing the thicknessof the insulation layer between the gate and the NBJ. Furthermore,the flux modulation generated by Josephson interference of two parallel3D NBJs can also be tuned by using V (g) ina similar manner. Therefore, we believe that this gate-tunable Josephsonjunction structure is promising for superconducting circuit fabricationat high integration levels.
引用
收藏
页码:8043 / 8049
页数:7
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