Inverted Perovskite Solar Cells with >85% Fill Factor via Sequential Interfacial Engineering

被引:6
|
作者
Shi, Junwei [1 ,2 ]
Li, Fangchao [2 ,3 ]
Liu, Cheng [2 ,4 ]
Ling, Xufeng [2 ,3 ]
Zhang, Xuliang [2 ,3 ]
Wang, Yao [2 ,3 ]
Guo, Junjun [2 ,3 ]
Zhao, Chenyu [2 ,3 ]
Wang, Deng [1 ]
Li, Youyong [2 ,4 ]
Ma, Wanli [2 ,4 ]
Yuan, Jianyu [2 ,3 ]
Xu, Baomin [1 ]
机构
[1] Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
[2] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China
[3] Soochow Univ, Jiangsu Key Lab Adv Negat Carbon Technol, Suzhou 215123, Jiangsu, Peoples R China
[4] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
fill factor; inverted perovskite solar cells; sequential interfacial engineering; PERFORMANCE; EFFICIENT; PASSIVATION; MIGRATION;
D O I
10.1002/solr.202300078
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Even the most efficient inverted p-i-n architecture perovskite solar cells (PSCs) are still inferior to those with regular n-i-p architecture, which is mainly limited by interfacial loss. Herein, both wet and dry metal-halide perovskite films are regulated through organic molecules-assisted sequential interfacial engineering for high-performance inverted PSCs. In specific, organic acetic acid treatment on the wet film potently regulates the nucleation and crystallization of perovskite films. Then, further loading 4-(dimethylamino)benzoic acid on the dry perovskite film creates a passivating agent layer to suppress defect formation, leading to more phase-pure and conductive perovskite films. Combined experimental and theoretical results illustrate that such sequential treatment is beneficial for decreasing surface trap states, non-radiative recombination, and carrier transport loss. As a result, the target inverted PSC exhibits an unprecedented high fill factor (FF) of 85.31% together with a champion efficiency of 21.37%, which is greatly improved relative to the reference (FF of 79.60%, and efficiency of 19.40%). It should be noted that such a high FF is among the highest report and corresponding to 94.38% of the Shockley-Queisser limited FF (90.39%) of PSCs with a bandgap of 1.576 eV. In addition, the storage stability against moisture of target inverted PSCs is remarkably enhanced.
引用
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页数:9
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