Unconventional Shrinkage of Hot Electron Distribution in Metal Directly Visualized by Ultrafast Imaging

被引:5
|
作者
Gao, Guoquan [1 ]
Jiang, Lan [1 ,2 ,3 ]
Xue, Bofeng [1 ]
Yang, Fei [1 ]
Wang, Ti [4 ,5 ]
Wan, Yan [6 ]
Zhu, Tong [1 ]
机构
[1] Beijing Inst Technol, Sch Mech Engn, Laser Micro Nano Fabricat Lab, Beijing 100081, Peoples R China
[2] Beijing Inst Technol Chongqing Innovat Ctr, Chongqing 401120, Peoples R China
[3] Beijing Inst Technol, Yangtze Delta Reg Acad, Jiaxing 314019, Peoples R China
[4] Wuhan Univ, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China
[5] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[6] Beijing Normal Univ, Coll Chem, Beijing 100875, Peoples R China
基金
中国国家自然科学基金;
关键词
electron-phonon coupling; high spatiotemporal resolution imaging; hot electron transport; interfacial heat transfer; transient reflection dynamics; 2-TEMPERATURE MODEL; HEAT-TRANSPORT; GOLD-FILMS; DYNAMICS; TIME; SURFACES;
D O I
10.1002/smtd.202201260
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Elucidation of hot carrier transport and cooling mechanisms at the micro-/nanoscale is critical for optoelectronics, thermal management, and photocatalysis. Spatiotemporal evolution of hot electrons is usually convoluted with their ultrafast dynamics. Herein, an ultrafast microscopy is employed to directly track the spatiotemporal distribution of photoexcited hot electrons, providing a transformative approach to unravel the competitive relationship of transport and cooling. In the temporal evolution profiles of hot electron distribution, an anomalous contracting stage showing obvious thickness and fluence dependency is observed, with a characteristic end time indicating the completion of electron-phonon (e-ph) thermalization. Hot electron transport plays a prominent role in the competition with e-ph coupling, while interfacial heat dissipation dominates nonequilibrium state evolution with thickness below ballistic length. This work significantly enriches the tool kit of ultrafast techniques and provides guidance for rational design and optimization of micro-/nanodevices.
引用
收藏
页数:11
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