Sol-gel deposition of Al-doped ZnO thin films: effect of additional zinc supply

被引：0

作者：

Abe, Koji ^{[1
]}

Kubota, Tasuku ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Elect & Mech Engn, Nagoya 4668555, Japan

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2023年 / 108卷 / 01期

关键词：

Zinc oxide; Transparent conductive oxide; Sol-gel; Dip-coating; OXIDE; GA; TEMPERATURE;

D O I：

10.1007/s10971-023-06183-x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Al-doped ZnO (AZO) films were deposited by sol-gel method. Precursor solutions for sol-gel method usually contain oxygen sources such as water, ethanol, and acetates. Zinc vacancy acceptors tend to be formed under oxygen-rich growth conditions. In this study, glass substrates with a zinc layer were used to supply zinc to the AZO films during calcination annealing. The diffraction peaks of wurtzite ZnO were observed in XRD patterns, and no diffraction peaks corresponding to zinc metal were observed. The AZO films were transparent in the visible range. The average transmittance (400-800 nm) was above 86%. The electrical properties of the AZO films were improved by using the substrates with a zinc layer. The AZO film deposited on the glass substrate with a 100-nm-thick zinc layer showed a resistivity of 9.4 x 10(-4) Ocm. [GRAPHICS]

引用

页码：28 / 34

页数：7

共 50 条

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