Silver-Doped Cu2(Sn,Ge)S3 Solar Cells

被引:2
|
作者
Ito, Tomohiro [1 ]
Nishimura, Takahito [2 ]
Chantana, Jakapan [1 ,3 ]
Mavlonov, Abdurashid [4 ]
Kawano, Yu
Negami, Takayuki [3 ]
Minemoto, Takashi [1 ]
机构
[1] Ritsumeikan Univ, Dept Elect & Elect Engn, 1-1-1 Nojihigashi, Kusatsu, Shiga 5258577, Japan
[2] Tokyo Inst Technol, Dept Elect & Elect Engn, 2-12-1 Ookayama,Meguro Ku, Tokyo 1528550, Japan
[3] Ritsumeikan Univ, Res Org Sci & Technol, 1-1-1 Nojihigashi, Kusatsu, Shiga 5258577, Japan
[4] Ritsumeikan Univ, Ritsumeikan Global Innovat Res Org, 1-1-1 Nojihigashi, Kusatsu, Shiga 5258577, Japan
来源
关键词
crystal growth; CTGS; Cu-2(Sn; Ge)S-3; silver; solar cells; EFFICIENCY; SURFACE; AG; FABRICATION; CU(IN; FILMS; LAYER;
D O I
10.1002/pssr.202300050
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Herein, the usefulness of silver (Ag)-doping into Cu-2(Sn,Ge)S-3 (CTGS) solar cells is demonstrated. From an observation via a field emission scanning electron microscope, grain growth promotion of the CTGS thin films by Ag-doping is revealed. It is found that undesirable defects are suppressed by an adequate Ag-dopant amount, resulting in reduced nonradiative recombination in photoluminescence spectra for the Ag-doped CTGS films. For the CTGS solar cell devices, Ag-doping into the CTGS absorbers mainly improves the short-circuit current density and open-circuit voltage. Finally, 3.2%-efficient Ag-doped CTGS solar cell is obtained at [Ag]/([Ag] + [Cu]) ratio of 0.05. It is believed that these findings will help to realize the highest efficiency for the CTGS solar cells.
引用
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页数:6
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