Superconductivity in electron-doped PbBi2Te4

被引：2
|
作者：
Xu, Xianghan [1 ]
Ni, Danrui [1 ]
Xie, Weiwei [2 ]
Cava, R. J. [1 ]
机构：
[1] Princeton Univ, Dept Chem, Princeton, NJ 08648 USA
[2] Michigan State Univ, Dept Chem, Lansing, MI 48824 USA
来源：
PHYSICAL REVIEW B | 2023年 / 108卷 / 05期
关键词：
PRESSURE-INDUCED SUPERCONDUCTIVITY; TOPOLOGICAL-INSULATOR;
D O I：
10.1103/PhysRevB.108.054525
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single crystals of In-doped PbBi2Te4 are synthesized via a conventional solid-state method. Chemical analysis and Hall measurements indicate that In replaces Pb, introducing n-type carriers, creating Pb1-xInxBi2Te4. A superconducting transition is observed with a maximum transition temperature around 2.06 K for Pb1-xInxBi2Te4. Field-dependent transport measurements reveal type-II superconductivity and yield a maximum upper critical field around 1.55 T. Thermodynamic data indicates bulk superconductivity in the BCS weak-coupling limit. Our findings establish an ambient-pressure superconducting system in the AM(2)X(4) family, and doped PbBi2Te4 as a promising platform for the study of topological superconductivity.
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页数：7
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