Modified BBFTO ceramic oxide with high dielectric constant and low loss-tangent for possible electronic applications

In this report, a complex barium titanate ceramic oxide of the form BaBi1.6Fe0.4TiO6 was prepared by the solid-state casting process. More Bi3+ percentage was selected to boost the dielectric and ferroelectric effects, while lowering the Fe3+ content could minimize the leakage current and consequently, the dielectric loss (tan delta). The X-ray diffraction (XRD) data suggests an establishment of monoclinic distortion (P21/c) of smaller mean crystallite size (similar to 40 nm) using the Debye-Scherrer formula. The compound exhibits dielectric values, such as er similar to 771, and relatively low loss, tan delta similar to 0.017 at the ambient experimental conditions. Thus, the material can be incorporated into different electronic devices where higher dielectric constant and lower losses are essential, for example, multi-layered ceramic capacitors, transmission lines, and gate dielectrics. The AC-conductivity essence of the compound follows Jonscher's power law as well as Arrhenius relation. The PE hysteresis loop was traced at different conditions with a function of the incident electric field in the ambient atmospheric conditions. The outcome of this study revealed that the material has remanent polarization hence suggesting a ferroelectric effect with less hysteresis loss; therefore, it could be useful in memory storage devices.