Synthesis of graphene nanomesh with symmetrical fractal patterns via hydrogen-free chemical vapor deposition

被引:1
|
作者
Li, Fang [1 ]
Li, You [1 ]
Zhao, Yibin [1 ]
Liu, Mingyan [1 ]
Kan, Erjun [1 ]
Li, Qiongyu [2 ]
Wan, Yi [1 ]
机构
[1] Nanjing Univ Sci & Technol, Dept Appl Phys, MIIT Key Lab Semicond Microstruct & Quantum Sensin, Nanjing 210094, Peoples R China
[2] Fujian Univ Technol, Sch Elect Elect Engn & Phys, Fuzhou 350118, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
graphene nanomesh; hydrogen-free chemical vapor deposition; morphology characterization; POROUS GRAPHENE; GRAIN-BOUNDARIES; GROWTH; OXYGEN;
D O I
10.1088/1361-6528/ac9d42
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Graphene nanomesh (GNM), an emerging graphene nanostructure with a tunable bandgap, has gained tremendous interests owing to its great potentials in the fields of high-performance field-effect transistors, electrochemical sensors, new generation of spintronics and energy converters. In previous works, GNM has been successfully obtained on copper foil surface by employing hydrogen as an etching agent. A more facile, and low-cost strategy for the preparation of GNM is required. Here, we demonstrated a direct and feasible means for synthesizing large-area GNM with symmetrical fractal patterns via a hydrogen-free chemical vapor deposition method. The influences of the growth time and the gas source flow on the morphology of GNM patterns were systematically investigated. Then, we exhibited the key reaction details and proposed a growth mechanism of the GNM synthesis during the hydrogen-free chemical vapor deposition process. This work provides a valuable guidance for quality control in GNM mass production.
引用
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页数:9
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