Formation of Zn-Containing Clusters in an Implanted Si3N4/Si Film

The results of the synthesis and study of Zn-containing clusters at the interface of a Si3N4/Si film implanted with Zn-64(+) ions with a dose of 5 x 10(16) cm(-2) and an energy of 40 keV are presented. A Si3N4 film is preliminarily deposited onto a silicon substrate using the CVD-method. Then, the implanted samples of 10 x 10 mm are annealed in an oxidizing atmosphere (in air) with a step of 100 degrees & Scy; for 1 h at each step in the temperature range from 400 to 800 degrees & Scy;. The Rutherford backscattering method is used to study the profiles of zinc during annealing. The structure and composition of the film are studied using scanning electron microscopy in combination with energy-dispersive spectroscopy, as well as photoluminescence. After implantation, individual clusters of metallic zinc with a size of about 100 nm or less are recorded near the surface of the Si3N4 film. It is established that, during annealing, Zn clusters grow in the sample and the phase of metallic Zn gradually transforms into phases of its oxide ZnO and then, presumably, silicide Zn2SiO4. After annealing at a temperature of 700 degrees & Scy;, which is the most optimal for obtaining the ZnO phase, zinc-oxide clusters with a size of about 100 nm are formed in the Si3N4 film. A peak appears in the photoluminescence spectrum at a wavelength of 370 nm due to exciton luminescence in zinc oxide. After annealing at 800 degrees C, the ZnO phase degrades and, presumably, the zinc-silicide phase Zn2SiO4 is formed.