Performances and preparation of zinc-tin oxide thin-film transistors

In order to improve the performance of thin film transistors (TFT), the high-performance ZTO thin film transistors is prepared on SiO2/p-Si substrates based on radio frequency magnetron sputtering technology, using zinc tin oxide (ZTO) material as the channel layer. The effects of sputtering power on the surface morphology and optical properties of ZTO thin films were studied using AFM, XRD, and UV-Vis. The electrical performance of ZTO thin film transistors is tested using a Semiconductor Device Analyser. XPS analysis is used to study the influence of sputtering power on the elemental composition and valence states in ZTO thin films, and to explore the principle and mechanism of high- performance thin film transistors. The results show that all ZTO thin film samples have an amorphous structure, dense surface, and transmittance greater than 90%. The electrical performance of ZTO thin film transistors can be improved by increasing the sputtering power appropriately. The thin film transistor prepared at 90 W sputtering power has the good comprehensive performance, with saturation mobility of 15. 61 cm(2)/(V center dot s), subthreshold swing of 0. 30 V/decade, threshold voltage of -5. 06 V, and current switching ratio of 8. 92x10(9).