A 330-GHz Wide Tuning Range VCO Based on Common-Base Cross-Coupled Topology in SiGe BiCMOS Technology

被引:1
|
作者
Zhang, Rui [1 ]
Chen, Zhe [1 ]
Wang, Zuojun [1 ]
Chen, Jixin [1 ]
Hong, Wei [1 ]
机构
[1] Southeast Univ, Sch Informat Sci & Engn, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
BiCMOS; common-base (CB) configuration; voltage-controlled oscillator (VCO); wide tuning range; EFFICIENCY;
D O I
10.1109/LMWT.2023.3307314
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wide tuning range push-push voltage-controlled oscillator (VCO) based on a 130-nm SiGe BiCMOS process operating around 330 GHz is described in this letter. The proposed VCO utilizes a cross-coupled topology to output the second harmonic from the common-mode point through a matching network. To achieve a wide tuning range and high output power at high frequencies, a common-base (CB) configuration for the cross-coupled core is used instead of the traditional common-emitter (CE) configuration. A pair of transistors is employed as varactors to extend the tuning range, reduce K-VCO, and minimize the power loss. The fabricated VCO exhibited a frequency range of 318.6-340.4 GHz (21.8-GHz tuning range, 6.62%) and a peak output power of -7.9 dBm with 31.4-mW dc power dissipation. By introducing a CB configuration into silicon-based VCO design above 300 GHz, the advantages of the wide tuning range and stable output power can be fully utilized.
引用
收藏
页码:1462 / 1465
页数:4
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