A review on applications of molybdenum disulfide material: Recent developments

This study overviews the rapid development of two-dimensional (2D) Transition Metal Dichalcogenide (TMD) materials. Molybdenum disulfide (MoS2) is one of the compounds currently being discussed because of its unique features that allow it to be used in various applications. Its unique structure, electronic properties, magnetic properties, mechanical properties, and band gap make it a viable material for replacing graphene and other semiconductor devices. On a nanoscale, it is a promising material with good spintronics and magnetoresistance properties. It is used in various energy applications including, ultra-low-leakage dynamic memory applications, Solar cell applications, Environmental monitoring applications, microwaves, and optoelectronic devices. The organic FET with MoS2 is a 2-bit memory device that can be controlled by voltage and can be used in low-cost memory devices. Combining MoS2 with other 2D nanomaterials, such as graphene, in hybrid structures can provide a balance between their defects and a superior combination of their wonderful qualities to overcome existing constraints. In this review, we discuss MoS2 properties and structure focusing on its applications and future challenges.