Oxide growth characteristics, kinetics and mechanism of rutile formation on pure titanium

被引:5
|
作者
Mehrotra, Shivansh [1 ]
Kalyan, Dova [2 ]
Makineni, Surendra Kumar [2 ]
Santra, Sangeeta [1 ]
机构
[1] IIT Delhi, Dept Mat Sci & Engn, Delhi 110016, India
[2] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, India
关键词
Oxide film growth kinetics; Diffusion; Crystallography; Titanium; Free energy; OXIDATION MECHANISM; THERMAL-OXIDATION; OXYGEN; DIFFUSION; MORPHOLOGY; TI; DEFECTS; ANATASE; PHASE;
D O I
10.1016/j.vacuum.2023.112682
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Isothermal oxidation of titanium results in the formation of rutile (TiO2) at temperatures of 600 degrees C - 1200 degrees C. Initial growth of TiO2 occurs linearly with an activation energy of 53 kJ/mol. Subsequent growth happens parabolically with an activation energy of 155 kJ/mol determined through a proposed quantitative oxide growth model. Inert particles were located at air/oxide interface, indicating oxygen ions to be dominant component for growth of TiO2. Crystal structure and defect chemistry of TiO2 suggests that oxygen diffuses through TiO2 via oxygen vacancies primarily. Temperature-dependent isothermal oxidation mechanism of titanium is proposed considering experimental results and thermodynamic arguments.
引用
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页数:12
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