The Role of Self-Assembled Monolayers in the Surface Modification and Interfacial Contact of Copper Fillers in Electrically Conductive Adhesives

被引:1
|
作者
Wang, Shanda [1 ]
Zhou, Zhaoxia [2 ]
Goulas, Athanasios [2 ]
Critchlow, Gary W. [2 ]
Whalley, David C. [1 ]
Hutt, David A. [1 ]
机构
[1] Loughborough Univ, Wolfson Sch Mech Elect & Mfg Engn, Loughborough LE11 3TU, Leics, England
[2] Loughborough Univ, Dept Mat, Loughborough LE11 3TU, Leics, England
关键词
self-assembled monolayer; electrical interconnection; oxidation protection; copper; isotropic conductiveadhesive; interface analysis; surface modification; conduction mechanisms; THERMAL-STABILITY; SILVER FLAKES; OXIDATION; AG; CU; ELECTRONICS; BEHAVIOR; EPOXY; NANOPARTICLES; ALKANETHIOLS;
D O I
10.1021/acsami.3c14900
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Printing of electrical circuits and interconnects using isotropic conductive adhesives (ICAs) is of great interest due to their low-temperature processing and compatibility with substrates for applications in sensors, healthcare, and flexible devices. As a lower cost alternative to silver (Ag), copper (Cu)-filled ICAs are desirable but limited by the formation of high-resistivity Cu surface oxides. To overcome this limitation, self-assembled monolayers (SAMs) of octadecanethiol (ODT) have been demonstrated to reduce the oxidation of micrometer-scale Cu powder particles for use in ICAs. However, the deposition and function of the SAM require further investigation, as described in this paper. As part of this work, the stages of the SAM deposition process, which included etching with hydrochloric acid to remove pre-existing oxides, were studied using X-ray photoelectron spectroscopy (XPS), which showed low levels of subsequent Cu oxidation when ODT coated. The treated Cu powders were combined with one- or two-part epoxy resins to make Cu-ICAs, and the effect of the Cu surface condition and weight loading on electrical conductivity was examined. When thermally cured in an inert argon atmosphere, ICAs filled with Cu protected by ODT achieved electrical conductivity up to 20 x 10(5)S center dot m(-1), comparable to Ag-ICAs, and were used to make a functional circuit. To understand the function of the SAM in these Cu-ICAs, scanning and transmission electron microscopy were used to examine the internal micro- and nano-structures along with the elemental distribution at the interfaces within sections taken from cured samples. Sulfur (S), indicative of the ODT, was still detected at the internal polymer-metal interface after curing, and particle-to-particle contacts were also examined. XPS also identified S on the surface of cured Cu-ICAs even after thermal treatment. Based on the observations, electrical contact and conduction mechanisms for these Cu-filled ICAs are proposed and discussed.
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页码:1846 / 1860
页数:15
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