Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core-Shell Nanowires

被引：3

作者：

Kolhep, Maximilian ^{[1
]}

Pantle, Florian ^{[2
,3
]}

Karlinger, Monika ^{[2
,3
]}

Wang, Di ^{[4
,5
]}

Scherer, Torsten ^{[4
,5
]}

Kuebel, Christian ^{[4
,5
,6
]}

Stutzmann, Martin ^{[2
,3
]}

Zacharias, Margit ^{[1
]}

机构：

[1] Univ Freiburg, Dept Microsyst Engn, Lab Nanotechnol, D-79110 Freiburg, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Tech Univ Munich, Phys Dept, D-85748 Garching, Germany

[4] Karlsruhe Inst Technol KIT, Karlsruhe Nano & Micro Facil KNMF, D-76344 Eggenstein leopoldshafen, Germany

[5] Karlsruhe Inst Technol KIT, Inst Nanotechnol INT, D-76344 Eggenstein leopoldshafen, Germany

[6] Tech Univ Darmstadt, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany

来源：

NANO LETTERS | 2023年 / 23卷 / 15期

关键词：

core-shell; nanowire; atomiclayer deposition; heteroepitaxy; strain; Raman spectroscopy; OPTICAL-PROPERTIES; ELASTIC-CONSTANTS; RAMAN-SCATTERING; GROWTH; FABRICATION;

D O I：

10.1021/acs.nanolett.3c01531

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate theepitaxial coating of GaN NWs with an epitaxialZnO shell by atomic layer deposition at 300 & DEG;C. Scanning transmissionelectron microscopy proves a sharp and defect-free coherent interface.The strain in the core-shell structure due to the lattice mismatchand different thermal expansion coefficients of GaN and ZnO was analyzedusing 4D-STEM strain mapping and Raman spectroscopy and compared totheoretical calculations. The results highlight the outstanding advantagesof epitaxial shell growth using atomic layer deposition, e.g., conformalcoating and precise thickness control.

引用

页码：6920 / 6926

页数：7

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