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- [2] Electrolyte-gated transistors for neuromorphic applicationsJournal of Semiconductors, 2021, 42 (01) : 81 - 93Heyi Huang论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Songshan Lake Materials Laboratory Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences论文数: 引用数: h-index:机构:Zhuohui Liu论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Songshan Lake Materials Laboratory Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesHai Zhong论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesErjia Guo论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Songshan Lake Materials Laboratory Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesMeng He论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesCan Wang论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Songshan Lake Materials Laboratory School of Physical Sciences, University of Chinese Academy of Science Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesGuozhen Yang论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesKuijuan Jin论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Songshan Lake Materials Laboratory School of Physical Sciences, University of Chinese Academy of Science Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- [3] Electrolyte-gated transistors for neuromorphic applicationsJournal of Semiconductors, 2021, (01) : 81 - 93Heyi Huang论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences School of Physical Sciences, University of Chinese Academy of Science Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences论文数: 引用数: h-index:机构:Zhuohui Liu论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences School of Physical Sciences, University of Chinese Academy of Science Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesHai Zhong论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesErjia Guo论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences School of Physical Sciences, University of Chinese Academy of Science Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesMeng He论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesCan Wang论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences School of Physical Sciences, University of Chinese Academy of Science Songshan Lake Materials Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesGuozhen Yang论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesKuijuan Jin论文数: 0 引用数: 0 h-index: 0机构: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences School of Physical Sciences, University of Chinese Academy of Science Songshan Lake Materials Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- [4] Electrolyte-gated transistors for neuromorphic applicationsJOURNAL OF SEMICONDUCTORS, 2021, 42 (01)Huang, Heyi论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaGe, Chen论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaLiu, Zhuohui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaZhong, Hai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaGuo, Erjia论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaHe, Meng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaWang, Can论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China Songshan Lake Mat Lab, Dongguan 523808, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaYang, Guozhen论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaJin, Kuijuan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China Songshan Lake Mat Lab, Dongguan 523808, Peoples R China Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
- [5] Graphene-Based Electrolyte-Gated Field-Effect Transistors for Potentiometrically Sensing Neuropeptide Y in Physiologically Relevant EnvironmentsACS APPLIED NANO MATERIALS, 2020, 3 (06): : 5088 - 5097Islam, Ahmad E.论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA UES Inc, Biol & Nanoscale Technol Div, Dayton, OH 45432 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USAMartineau, Rhett论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA UES Inc, Biol & Nanoscale Technol Div, Dayton, OH 45432 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USACrasto, Cameron M.论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA UES Inc, Biol & Nanoscale Technol Div, Dayton, OH 45432 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USAKim, Hyunil论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USARao, Rahul S.论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA UES Inc, Biol & Nanoscale Technol Div, Dayton, OH 45432 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USAMaruyama, Benji论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USAKim, Steve S.论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Human Performance Wing 711, Wright Patterson AFB, OH 45433 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USADrummy, Lawrence F.论文数: 0 引用数: 0 h-index: 0机构: Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA Air Force Res Lab, Mat Aad Mfg Directorate, Wright Patterson AFB, OH 45433 USA
- [6] Electrolyte-Gated Graphene Schottky Barrier TransistorsADVANCED MATERIALS, 2015, 27 (39) : 5875 - 5881Kim, Beom Joon论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South KoreaHwang, Euyheon论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South KoreaKang, Moon Sung论文数: 0 引用数: 0 h-index: 0机构: Soongsil Univ, Dept Chem Engn, Seoul 156743, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South KoreaCho, Jeong Ho论文数: 0 引用数: 0 h-index: 0机构: Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea Sungkyunkwan Univ, Sch Chem Engn, Suwon 440746, South Korea Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
- [7] Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based TransistorsJOURNAL OF NANOMATERIALS, 2013, 2013Karimi, Hediyeh论文数: 0 引用数: 0 h-index: 0机构: Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, Malaysia Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Kuala Lumpur 54100, Malaysia Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, MalaysiaYusof, Rubiyah论文数: 0 引用数: 0 h-index: 0机构: Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, Malaysia Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Kuala Lumpur 54100, Malaysia Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, MalaysiaAhmadi, Mohammad Taghi论文数: 0 引用数: 0 h-index: 0机构: Univ Teknol Malaysia, Fac Elect Engn, Computat Nanoelect Res Grp, Johor Baharu 81310, Malaysia Urmia Univ, Dept Phys, Nanotechnol Res Ctr, Nanoelect Grp, Orumiyeh 57147, Iran Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, MalaysiaSaeidmanesh, Mehdi论文数: 0 引用数: 0 h-index: 0机构: Univ Teknol Malaysia, Fac Elect Engn, Computat Nanoelect Res Grp, Johor Baharu 81310, Malaysia Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, MalaysiaRahmani, Meisam论文数: 0 引用数: 0 h-index: 0机构: Univ Teknol Malaysia, Fac Elect Engn, Skudai 81310, Johor, Malaysia Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, MalaysiaAkbari, Elnaz论文数: 0 引用数: 0 h-index: 0机构: Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, Malaysia Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, MalaysiaKiat, Andwong King论文数: 0 引用数: 0 h-index: 0机构: Univ Teknol Malaysia, Fac Elect Engn, Skudai 81310, Johor, Malaysia Univ Teknol Malaysia, Ctr Artificial Intelligence & Robot, Kuala Lumpur 54100, Malaysia
- [8] Electrolyte-gated organic field-effect transistors for sensing applicationsAPPLIED PHYSICS LETTERS, 2011, 98 (15)Buth, F.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyKumar, D.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyStutzmann, M.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyGarrido, J. A.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
- [9] Electrolyte-gated optoelectronic transistors for neuromorphic applicationsJournal of Semiconductors, 2025, 46 (02) : 9 - 26Jinming Bi论文数: 0 引用数: 0 h-index: 0机构: Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South UniversityYanran Li论文数: 0 引用数: 0 h-index: 0机构: Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South UniversityRong Lu论文数: 0 引用数: 0 h-index: 0机构: Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South UniversityHonglin Song论文数: 0 引用数: 0 h-index: 0机构: Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South UniversityJie Jiang论文数: 0 引用数: 0 h-index: 0机构: Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University
- [10] Frequency response of electrolyte-gated graphene electrodes and transistorsJOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (09)Drieschner, Simon论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, Germany Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, GermanyGuimera, Anton论文数: 0 引用数: 0 h-index: 0机构: CSIC, IMB CNM, Campus UAB, Bellaterra 08193, Barcelona, Spain CIBER BBN, Networking Ctr Bioengn Biomat & Nanomed, Zaragoza, Spain Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, GermanyCortadella, Ramon G.论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol, Campus UAB, Bellaterra 08193, Spain Barcelona Inst Sci & Technol, Campus UAB, Bellaterra 08193, Spain Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, GermanyViana, Damia论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol, Campus UAB, Bellaterra 08193, Spain Barcelona Inst Sci & Technol, Campus UAB, Bellaterra 08193, Spain Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, GermanyMakrygiannis, Evangelos论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, GermanyBlaschke, Benno M.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, Germany Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, GermanyVieten, Josua论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, Germany Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, GermanyGarrido, Jose A.论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol, Campus UAB, Bellaterra 08193, Spain Barcelona Inst Sci & Technol, Campus UAB, Bellaterra 08193, Spain ICREA, Pg Lluis Companys 23, Barcelona 08010, Spain Tech Univ Munich, Walter Schottky Inst & Phys Dept, Am Coulombwall 4, D-85748 Garching, Germany