Optimized charge transport in N-substituted isatin-based acceptor-donor-acceptor small molecules by regulating the side chain length for solution-processable organic thin-film transistors

被引:0
|
作者
Cai, Wenyu [1 ,4 ]
Lee, Jiyun [2 ,3 ]
Zhao, Yao [1 ]
Kang, Boseok [2 ,3 ]
Zhang, Guobing [1 ,4 ]
机构
[1] Hefei Univ Technol, Acad Optoelect Technol, Special Display & Imaging Technol Innovat Ctr Anhu, Anhui Prov Key Lab Measuring Theory & Precis Instr, Hefei 230009, Peoples R China
[2] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol, Dept Nano Sci & Technol, Suwon 16419, South Korea
[3] Sungkyunkwan Univ SKKU, Dept Nano Engn, Suwon 16419, South Korea
[4] Key Lab Adv Funct Mat & Devices Anhui Prov, Sch Chem & Chem Engn, Hefei, Peoples R China
来源
MATERIALS ADVANCES | 2023年 / 4卷 / 15期
基金
中国国家自然科学基金; 新加坡国家研究基金会;
关键词
POLYMER SEMICONDUCTORS; HOLE MOBILITIES; PERFORMANCE;
D O I
10.1039/d3ma00048f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Side chains are necessary components of solution-processable semiconductors and exert a significant influence on charge transport. In this work, a series of acceptor-donor-acceptor (A-D-A) small molecules (C1-C10) based on indacenodithieno[3,2-b]thiophene (IDTT) as the donor and N-substituted isatin with different side-chains (from methyl to n-decyl) as acceptors were designed and synthesized for solution-processable organic thin-film transistors. The side chain length had an obvious influence on the field-effect mobility with a nearly odd-even effect. The small molecule with the methyl side chain did not exhibit any field-effect performance, while the other small molecules with longer alkyl chains showed excellent device performance with field-effect mobilities of over 1 cm(2) V-1 s(-1). In particular, the small molecules with ethyl and hexyl side-chains exhibited the highest mobilities of similar to 6 cm(2) V-1 s(-1). These results indicate that the minor structural modification of the side chain in A-D-A small molecules significantly affects the structural order and resulting device performance.
引用
收藏
页码:3344 / 3350
页数:7
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