Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

被引：73

作者：

Song, Min-Kyu ^{[1
,2
]}

Kang, Ji-Hoon ^{[1
,2
]}

Zhang, Xinyuan ^{[2
,3
]}

Ji, Wonjae ^{[4
]}

Ascoli, Alon ^{[5
]}

Messaris, Ioannis ^{[5
]}

Demirkol, Ahmet Samil ^{[5
]}

Dong, Bowei ^{[6
]}

Aggarwal, Samarth ^{[6
]}

Wan, Weier ^{[7
]}

Hong, Seok-Man ^{[8
]}

Cardwell, Suma George ^{[9
]}

Boybat, Irem ^{[10
]}

Seo, Jae-sun ^{[11
]}

Lee, Jang-Sik ^{[4
]}

Lanza, Mario ^{[12
]}

Yeon, Hanwool ^{[13
]}

Onen, Murat ^{[14
]}

Li, Ju ^{[3
,15
]}

Yildiz, Bilge ^{[3
,15
]}

del Alamo, Jesus A. ^{[14
]}

Kim, Seyoung ^{[4
]}

Choi, Shinhyun ^{[8
]}

Milano, Gianluca ^{[16
]}

Ricciardi, Carlo ^{[17
]}

Alff, Lambert ^{[18
]}

Chai, Yang ^{[19
]}

Wang, Zhongrui ^{[20
]}

Bhaskaran, Harish ^{[6
]}

Hersam, Mark C. ^{[21
,22
,23
]}

Strukov, Dmitri ^{[24
]}

Wong, H. -S. Philip ^{[7
]}

Valov, Ilia ^{[25
,26
]}

Gao, Bin ^{[27
]}

Wu, Huaqiang ^{[27
]}

Tetzlaff, Ronald ^{[5
]}

Sebastian, Abu ^{[10
]}

Lu, Wei ^{[28
]}

Chua, Leon ^{[29
]}

Yang, J. Joshua ^{[30
]}

Kim, Jeehwan ^{[1
,2
,3
]}

机构：

[1] Massachusetts Inst Technol MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[2] Massachusetts Inst Technol MIT, Res Lab Elect, Cambridge, MA 02139 USA

[3] Massachusetts Inst Technol MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea

[5] Tech Univ Dresden, Fac Elect & Comp Engn, Chair Fundamentals Elect Engn, Sch Engn Sci,Inst Principles Elect & Elect Engn, D-01069 Dresden, Germany

[6] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[7] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[8] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea

[9] Sandia Natl Labs, Albuquerque, NM 87123 USA

[10] IBM Res Europe, CH-8803 Ruschlikon, Switzerland

[11] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA

[12] King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

[13] Gwangju Inst Sci & Technol GIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea

[14] Massachusetts Inst Technol MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[15] Massachusetts Inst Technol MIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA

[16] Ist Nazl Ric Metrol INRiM, Adv Mat Metrol & Life Sci Div, Str Cacce, I-10135 Turin, Italy

[17] Politecn Torino, Dept Appl Sci & Technol, I-10129 Turin, Italy

[18] Tech Univ Darmstadt, Inst Mat Sci, Adv Thin Film Technol Div, D-64287 Darmstadt, Germany

[19] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China

[20] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China

[21] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[22] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[23] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA

[24] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[25] Res Ctr Juelich, PGI-7,Wilhelm Johnen Str, D-52425 Julich, Germany

[26] Bulgarain Acad Sci, Inst Electrochem & Energy Syst, Sofia 1113, Bulgaria

[27] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China

[28] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[29] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[30] Univ Southern Calif, Dept Elect & Comp Engn, Los Angeles, CA 90089 USA

来源：

ACS NANO | 2023年 / 17卷 / 13期

基金：

新加坡国家研究基金会; 欧盟地平线“2020”; 中国国家自然科学基金; 美国国家科学基金会;

关键词：

memristor; compute-in-memory; resistive switchingmemory; ferroelectric memory; phase change memory; ion-intercalation resistors; memtransistors; neuromorphic computing; in-sensor computing; PHASE-CHANGE MATERIALS; RESISTIVE SWITCHING MEMORY; DEEP NEURAL-NETWORKS; IN-MEMORY; CONDUCTANCE QUANTIZATION; 2-DIMENSIONAL MATERIALS; PATTERN-CLASSIFICATION; MOS2; MEMTRANSISTORS; 2ND-ORDER MEMRISTOR; OXIDE MEMRISTORS;

D O I：

10.1021/acsnano.3c03505

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Memristive technology has been rapidly emerging as apotentialalternative to traditional CMOS technology, which is facing fundamentallimitations in its development. Since oxide-based resistive switcheswere demonstrated as memristors in 2008, memristive devices have garneredsignificant attention due to their biomimetic memory properties, whichpromise to significantly improve power consumption in computing applications.Here, we provide a comprehensive overview of recent advances in memristivetechnology, including memristive devices, theory, algorithms, architectures,and systems. In addition, we discuss research directions for variousapplications of memristive technology including hardware acceleratorsfor artificial intelligence, in-sensor computing, and probabilisticcomputing. Finally, we provide a forward-looking perspective on thefuture of memristive technology, outlining the challenges and opportunitiesfor further research and innovation in this field. By providing anup-to-date overview of the state-of-the-art in memristive technology,this review aims to inform and inspire further research in this field.

引用

页码：11994 / 12039

页数：46

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