Enhanced thermoelectric performance of Bi2-xCuxS3 by hydrothermal synthesis and spark plasma sintering

被引:2
|
作者
Liu, Hui [1 ]
Zhang, Li [1 ]
Shen, Yaozhen [2 ]
Hou, Xiaojiang [1 ]
Ye, Xiaohui [1 ]
Suo, Guoquan [1 ]
Zhu, Beibei [2 ]
Yang, Yanling [1 ]
机构
[1] Shaanxi Univ Sci & Technol, Sch Mat Sci & Engn, Shaanxi Key Lab Green Preparat & Functionalizat In, Xian 710021, Peoples R China
[2] Southeast Univ, Sch Mat Sci & Engn, Jiangsu Key Lab Adv Met Mat, Nanjing 211189, Peoples R China
关键词
Bi2S3; Cu doping; Hydrothermal method; Thermoelectric performance; N-TYPE BI2S3; THERMAL-CONDUCTIVITY; POWER; SYSTEM; BULK; SNSE;
D O I
10.1016/j.ceramint.2023.08.292
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bi2S3 has been considered as a promising medium temperature thermoelectric material due to its low thermal conductivity and cost-effective features. However, the intrinsically poor electrical conductivity of Bi2S3 still limits its further thermoelectric applications. In this work, we optimize the thermoelectric performance of Bi2S3 using Cu doping via a facile hydrothermal method combined with spark plasma sintering. A well-tuned carrier concentration of 1.2 x 10(19) cm(-3) and electrical conductivity of 47 S cm(-1) at 523 K was attained, which is attributed to the increased electrons by Cu doping. In addition, the appeared micro-nano pores in both Bi2S3 and Cu doped Bi2S3 samples after spark plasma sintering benefits the reduction of lattice thermal conductivity (kappa l). The Bi1.985Cu0.015S3 sample exhibited the lowest kappa l of 0.405 W m(-1) K-1 at 573 K, which is the lowest value as far as we know in the reported Cu doped Bi2S3 materials at the same temperature. Finally, A maximum ZT value of 0.3 at 573 K was achieved in Bi1.985Cu0.015S3 sample. This study provides a new strategy to achieve low kappa l and high ZT value in Bi2S3-based thermoelectric materials.
引用
收藏
页码:36130 / 36136
页数:7
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