Finite Element Study for Mass Sensitivity of Love Surface Acoustic Wave Sensor with Si3N4-SiO2 Double-Covered Waveguiding Layer

被引:1
|
作者
Li, Luming [1 ,2 ]
Zhou, Mingyong [1 ,2 ]
Huang, Lei [1 ,2 ]
Jiang, Bingyan [1 ,2 ]
机构
[1] Cent South Univ, State Key Lab Precis Mfg Extreme Serv Performance, Changsha 410083, Peoples R China
[2] Cent South Univ, Coll Mech & Elect Engn, Changsha 410083, Peoples R China
基金
中国国家自然科学基金;
关键词
L-SAW; double-covered waveguiding layer; mass sensitivity; finite element method (FEM); SH-SAW SENSORS; RESONATOR;
D O I
10.3390/mi14091696
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Love surface acoustic wave (L-SAW) sensors are miniaturized, easy to integrate, and suitable for detection in liquid environments. In this paper, an L-SAW sensor with a thin Si3N4-SiO2 double-covered layer was proposed for samples with small mass loads. The output response, phase velocity of the acoustic wave, and the mass sensitivity were analyzed using the finite element method (FEM). The simulation results show that the Si3N4 layer with high wave velocity greatly weakens the limitation of SiO2 on the phase velocity. The phase velocity can reach about 4300 m/s, which can increase the frequency shift when the same mass load is applied. Within a certain range, the mass sensitivity of the sensor is enhanced with the increase in the total thickness of the waveguiding layer and the thickness ratio of Si3N4 in the double-covered layer. When the thickness ratio is 1:2, the peak value of the mass sensitivity of the sensor is approximately 50% higher than that achieved with only the SiO2 waveguiding layer. The surface average stress of the delay line region follows the same trend as the mass sensitivity. The increase in mass sensitivity is the result of the heightened stress on the sensor surface. This L-SAW sensor, featuring a double-covered waveguiding layer, demonstrates high sensitivity and a simple structure. The simulation results lay a foundation for the design and manufacture of SAW sensors.
引用
收藏
页数:13
相关论文
共 48 条
  • [1] LOW-LOSS SI3N4-SIO2 OPTICAL WAVE-GUIDES ON SI
    HENRY, CH
    KAZARINOV, RF
    LEE, HJ
    ORLOWSKY, KJ
    KATZ, LE
    APPLIED OPTICS, 1987, 26 (13): : 2621 - 2624
  • [2] Mass Sensitivity Evaluation of a Love Wave Sensor Using the 3D Finite Element Method
    Rocha-Gaso, M. -I.
    Fernandez-Diaz, R.
    Arnau-Vives, A.
    March-Iborra, C.
    2010 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS), 2010, : 228 - 231
  • [3] Theoretical study on the chemistry of intergranular glassy film in Si3N4-SiO2 ceramics
    Yoshiya, M
    Tatsumi, K
    Tanaka, I
    Adachi, H
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2002, 85 (01) : 109 - 112
  • [4] Theoretical study on the structure and energetics of intergranular glassy film in Si3N4-SiO2 ceramics
    Yoshiya, Masato
    Tanaka, Isao
    Adachi, Hirohiko
    Cannon, Rowland M.
    INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2010, 101 (01) : 57 - 65
  • [5] Fabrication and properties of porous Si3N4-SiO2 ceramics with dense surface and gradient pore distribution
    Li, Xiangming
    Wu, Pute
    Zhu, Delan
    CERAMICS INTERNATIONAL, 2014, 40 (03) : 5079 - 5084
  • [6] Comparison of Si3N4-SiO2 and SiO2 Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects
    Choi, Won Young
    Lee, Chang Hoon
    Kim, Young Hun
    Park, Kwan Kyu
    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2020, 67 (04) : 879 - 882
  • [7] Molecular dynamics study of intergranular glassy film in high-purity Si3N4-SiO2 ceramics
    Yoshiya, M
    Tatsumi, K
    Tanaka, I
    Adachi, H
    GRAIN BOUNDARY ENGINEERING IN CERAMICS - FROM GRAIN BOUNDARY PHENOMENA TO GRAIN BOUNDARY QUANTUM STRUCTURES, 2000, 118 : 453 - 460
  • [8] Impact of Si3N4 layer insertion to hybrid modes in low-velocity surface acoustic wave resonator on LiTaO3/SiO2/Si substrate
    Zhou, Weijian
    Hu, Richeng
    Kang, Yingbo
    Bao, Jingfu
    Hashimoto, Ken-Ya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2025, 64 (04)
  • [9] <bold>Development of ZnO/SiO2/Si Love Mode Surface Acoustic Wave Devices with High Sensitivity for Biosensor Applications</bold>
    Krishnamoorthy, Soutnya
    Iliadis, Agis A.
    PROCEEDINGS OF THE 2006 IEEE SENSORS APPLICATIONS SYMPOSIUM, 2006, : 14 - 17
  • [10] Study on PECVD SiO2/Si3N4 double-layer electrets with different thicknesses
    XuDong Zou
    JinWen Zhang
    Science China Technological Sciences, 2011, 54 : 2123 - 2129