Improvement of electrical insulating properties for defective metal/epoxy resin interface in power modules by micro-plasma jet

被引:4
|
作者
Zhu, Xi [1 ,2 ,3 ]
Guan, Xiuhan [1 ]
Dai, Luyi [1 ]
Cui, Xinglei [1 ]
Fan, Jiajie [2 ,3 ]
Fang, Zhi [1 ]
机构
[1] Nanjing Tech Univ, Coll Elect Engn & Control Sci, Nanjing 211816, Jiangsu, Peoples R China
[2] Fudan Univ, Inst Future Lighting, Acad Engn & Technol, Shanghai 200433, Peoples R China
[3] Fudan Univ Ningbo, Res Inst, Ningbo 315336, Peoples R China
关键词
Plasma jet; Precise treatment; Defect inhibition; Electrical properties improvement; Metal/epoxy resin interface; DIELECTRIC BARRIER DISCHARGE; SURFACE MODIFICATION; COMPOSITES;
D O I
10.1016/j.apsusc.2023.158064
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-voltage power modules inevitably face the critical problem of electric field distortion at triple-junction point (Cu/insulation substrate/potting material) and accidental introduction of unexpected micro-metal defects on insulation substrate, which damages electrical insulating properties and induces breakdown. In this study, a novel precise surface treatment method based on atmospheric pressure micro-plasma jet (mu-APPJ) is proposed for rejuvenating and improving electrical insulating properties of defective Cu/epoxy resin (EP) substrate in power modules. Results show that a typical mu-APPJ with a diameter of about 200 mu m is developed to precisely treat the micro-level metal defect in Cu/EP interface, and a spherical-clustered Si-containing functional film (similar to Si-O-4) can be fabricated on EP substrate by optimized Ar/Hexamethyldisiloxane (HMDSO)/mu-APPJ, which significantly enhances the hydrophobicity of EP surface. Moreover, the plasma-assisted film deposition around mu m-defect improves interface electrical properties of defective Cu/EP samples, evidenced by higher flashover voltages and suppressed partial discharge. Further analysis based on simulations reveals that the deposited typical film not only promotes charge mobility and creepage distance on EP, but also introduces additional trap levels that capture electrons and inhibit electric field around metal defects, thereby suppressing partial discharge failure and improving electrical insulating properties.
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页数:13
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