Influence of H2O in bonding interfaces on bonding strength of plasma-activated bonded silicon oxide

被引：1

作者：

Yoshioka, Hirotaka ^{[1
]}

Fujii, Nobutoshi ^{[1
]}

Shigetoshi, Takushi ^{[1
]}

Kamei, Takahiro ^{[1
]}

Kotoo, Kengo ^{[1
]}

Ogawa, Naoki ^{[1
]}

Furuse, Shunsuke ^{[1
]}

Horikiri, Tatsuya ^{[1
]}

Saito, Sotetsu ^{[1
]}

Saito, Suguru ^{[1
]}

Hagimoto, Yoshiya ^{[1
]}

Iwamoto, Hayato ^{[1
]}

机构：

[1] Sony Semicond Solutions Corp, Res Div 2, Atsugi, Kanagawa, Japan

来源：

2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC | 2023年

关键词：

Wafer-to-Wafer Bonding; Bonding Strength;

D O I：

10.1109/ECTC51909.2023.00192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Many studies of the plasma-activated bonding, bonding strength have focused on the wafer surface. However, no studies have reported on how moisture in the film affects the bond strength. Therefore, in this study, we evaluated the effect of moisture in the membrane on bonding strength. The results indicated that the bonding strength was higher for the film with higher water content, and that an oxide film with higher water content expanded during heat treatment after bonding. We propose a new model in which film expansion contributes to higher bonding strength.

引用

页码：1119 / 1123

页数：5

共 50 条

[1] Sequential Plasma-Activated Bonding Mechanism of Silicon/Silicon Wafers
Howlader, Matiar M. R.
Kagami, G.
Lee, Sang Ho
Wang, Jinguo G.
Kim, Moon J.
Yamauchi, Akira
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2010, 19 (04) : 840 - 848
[2] Formation of silicon structures by plasma-activated wafer bonding
Amirfeiz, P
Bengtsson, S
Bergh, M
Zanghellini, E
Börjesson, L
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (07) : 2693 - 2698
[3] Role of Heating on Plasma-Activated Silicon Wafers Bonding
Howlader, M. M. R.
Suga, T.
Itoh, H.
Lee, T. H.
Kim, M. J.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (11) : H846 - H851
[4] Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers
Bayram, Baris
Akar, Orhan
Akin, Tayfun
DIAMOND AND RELATED MATERIALS, 2010, 19 (11) : 1431 - 1435
[5] Plasma-activated GaAs/Si wafer bonding with high mechanical strength and electrical
Zhao, Yongqiang
Liu, Wen
Bao, Yidi
Yang, Fuhua
Wang, Xiaodong
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 143
[6] H2O VAPOR PLASMA FOR BONDING PDMS WITH VARIOUS MATERIALS
Matsuo, Fumiharu
Oda, Haruka
Miyake, Fumina
Otsuki, Hideo
Takeuchi, Shoji
Tsuji, Osamu
2020 33RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2020), 2020, : 1308 - 1309
[7] Plasma-activated silicon-glass high-strength multistep bonding for low-temperature vacuum packaging
Yu, Mingzhi
Zhao, Libo
Wang, Yongliang
Xia, Yong
Ma, Yintao
Wang, Yanbin
Han, Xiangguang
Chen, Yao
Lu, Shun
Luo, Guoxi
Zhu, Nan
Yang, Ping
Wang, Kaifei
Lin, Qijing
Jiang, Zhuangde
CHEMICAL ENGINEERING JOURNAL, 2023, 471
[8] Enhanced bonding strength of InP/Si chip-on-wafer by plasma-activated bonding using stress-controlled interlayer
Kikuchi, Takehiko
Bai, Liu
Mitarai, Takuya
Yagi, Hideki
Furukawa, Masato
Amemiya, Tomohiro
Nishiyama, Nobuhiko
Arai, Shigehisa
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (SB)
[9] Efficiency of H2O Diffusion Barriers at Si-Si Direct Bonding Interfaces
Moriceau, H.
Rieutord, F.
Libralesso, L.
Ventosa, C.
Fournel, F.
Morales, C.
Mc Cormick, T.
Chevolleau, Th.
Radu, I.
SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04): : 467 - 474
[10] CO•••H2O bonding in and on porous ices
Givan, A
Loewenschuss, A
Nielsen, CJ
VIBRATIONAL SPECTROSCOPY, 1998, 16 (01) : 85 - 88

← 1 2 3 4 5 →