Possible Room-Temperature Ferromagnetic Semiconductors

被引:3
|
作者
You, Jing-Yang [1 ]
Dong, Xue-Juan [2 ]
Gu, Bo [3 ,4 ]
Su, Gang [3 ,4 ]
机构
[1] Natl Univ Singapore, Fac Sci, Dept Phys, Singapore 117551, Singapore
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Kavli Inst Theoret Sci, Beijing 100190, Peoples R China
[4] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
基金
北京市自然科学基金; 国家重点研发计划; 中国国家自然科学基金;
关键词
MAGNETIC SEMICONDUCTOR; CHERN-NUMBER; DOPED ZNO; SPIN; TRANSITION; MONOLAYER; SPINTRONICS; REALIZATION; ANISOTROPY; INSULATOR;
D O I
10.1088/0256-307X/40/6/067502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Magnetic semiconductors integrate the dual characteristics of magnets and semiconductors. It is difficult to manufacture magnetic semiconductors that function at room temperature. Here, we review a series of our recent theoretical predictions on room-temperature ferromagnetic semiconductors. Since the creation of two-dimensional (2D) magnetic semiconductors in 2017, there have been numerous developments in both experimental and theoretical investigations. By density functional theory calculations and model analysis, we recently predicted several 2D room-temperature magnetic semiconductors, including CrGeSe3 with strain, CrGeTe3/PtSe2 heterostructure, and technetium-based semiconductors (TcSiTe3, TcGeSe3, and TcGeTe3), as well as PdBr3 and PtBr3 with a potential room-temperature quantum anomalous Hall effect. Our findings demonstrated that the Curie temperature of these 2D ferromagnetic semiconductors can be dramatically enhanced by some external fields, such as strain, construction of heterostructure, and electric field. In addition, we proposed appropriate doping conditions for diluted magnetic semiconductors, and predicted the Cr doped GaSb and InSb as possible room-temperature magnetic semiconductors.
引用
收藏
页数:10
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