Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

被引:2
|
作者
Gorchichko, Mariia [1 ,2 ]
Zhang, En Xia [3 ]
Reaz, Mahmud [1 ,4 ]
Li, Kan [1 ,5 ]
Wang, Peng Fei [1 ,6 ]
Cao, Jingchen [1 ,7 ]
Brewer, Rachel M. [1 ,8 ]
Schrimpf, Ronald D. [3 ]
Reed, Robert A. [3 ]
Sierawski, Brian D. [3 ]
Alles, Michael L. [3 ]
Cox, Jonathan [9 ]
Moran, Steven L.
Iyer, Subramanian S.
Fleetwood, Daniel M. [3 ]
机构
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37212 USA
[2] Appl Mat Inc, Santa Clara, CA 95054 USA
[3] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
[4] Microchip Technol Inc, San Jose, CA 95014 USA
[5] HUAWEI, Shenzhen 518129, Guangdong, Peoples R China
[6] Western Digital, Milpitas, CA 95035 USA
[7] Intel Corp, Folsom, CA 95630 USA
[8] Lockheed Martin Space, Huntsville, AL 35805 USA
[9] Univ Calif Los Angeles, Elect & Comp Engn Dept, Los Angeles, CA 90095 USA
关键词
1/f noise; charge trap transistor (CTT); defects; finFET; HfO2; low-frequency noise (LFN); random telegraph noise (RTN); random telegraph signal (RTS); total-ionizing dose (TID); 14 NM FINFET; 1/F NOISE; BORDER TRAPS; BIAS DEPENDENCE; FLICKER NOISE; GATE-LENGTH; OXIDE TRAPS; MOS; DEFECTS; IMPACT;
D O I
10.1109/TED.2023.3265939
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2-and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/f noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation acti-vates a large number of stable radiation-induced traps.
引用
收藏
页码:3215 / 3222
页数:8
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