Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption

被引：4

作者：

Wang, Lu ^{[1
]}

Zhu, Hongyu ^{[1
]}

Zuo, Ze ^{[1
]}

Wen, Dianzhong ^{[1
]}

机构：

[1] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2023年 / 9卷 / 04期

基金：

中国国家自然科学基金;

关键词：

biological synapses; flexibility; low power consumption; RRAM; GOLD NANOPARTICLES; PERFORMANCE; BEHAVIOR; FILMS;

D O I：

10.1002/aelm.202201032

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Most current resistive memory has the problems of high and unstable threshold voltages and high device misread rates caused by low current switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph:gold nanoparticles/PMMA/indium tin oxide memory device is fabricated by adding PMMA layers above and below the active layer. The device not only has stable bipolar switching characteristics with a high ON/OFF current ratio but also has a lower and more stable threshold voltage. Potentiation, depression, and spike-time-dependent plasticity at biological synapses are realized using this device. The device is successfully fabricated on a flexible substrate, and the device can still maintain a stable working state after 10(4) bending cycles. This research opens a new door for the future realization of artificial synapses in neural network hardware.

引用

页数：7

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