The role of defects in the persistent photoconductivity of BaSnO3 thin films

被引:3
|
作者
Figueroa, C. [1 ]
Villafuerte, M. [1 ]
Straube, B. [1 ]
Ferreyra, J. [1 ]
Navarro, C. [2 ]
Leal, V. Runco [2 ]
Bridoux, G. [1 ]
机构
[1] Univ Nacl Tucuman, Fac Ciencias Exactas yTecnol, Lab Fis Solido, INFINOA,CONICET UNT, RA-4000 San Miguel De Tucuman, Argentina
[2] Univ Nacl Tucuman, Inst Inorgan Chem, Fac Bioquim Quim & Farm, Ayacucho 471, RA-4000 San Miguel De Tucuman, Argentina
关键词
photoconductivity; semiconductors; metal transition oxides; LA-DOPED BASNO3;
D O I
10.1088/1361-648X/acbcb7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Time-dependent photoconductivity (PC) and PC spectra have been studied in oxygen deficient BaSnO3 thin films grown on different substrates. X-ray spectroscopy measurements show that the films have epitaxially grown on MgO and SrTiO3 substrates. While on MgO the films are nearly unstrained, on SrTiO3 the resulting film is compressive strained in the plane. Electrical conductivity in dark is increased in one order of magnitude for the films on SrTiO3 in comparison to the one on MgO. This leads to an increase of PC in the latter film in at least one order of magnitude. PC spectra show a direct gap with a value of E-G = 3.9 E-G = 3.36 3 film on SrTiO3 more defects are created probably due to strain. This latter effect can also explain the different transition values obtained for both type of films.
引用
收藏
页数:7
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