Thermal aging effects on the properties of the Cu/(SAC0307 powder + Zn-particles)/Cu joint ultrasonic-assisted soldered at low-temperature

Purpose This study aims to evaluate the effect of thermal aging temperature on the properties of Cu/Cu joints. Design/methodology/approach A new method that 1 um Zn-particles and Sn-0.3Ag-0.7Cu (SAC0307) with a particle size of 25-38 mu m were mixed to fill the joint and successfully achieved the micro-joining of Cu/Cu under ultrasonic-assisted at low-temperature, and then the effect of thermal aging temperature on the properties of Cu/Cu joints was researched. Findings The composition of the intermetallic compounds (IMCs) on the upper and lower interfaces of Cu/SACZ/Cu joints remained unchanged, which was Cu5Zn8 in aging process, and the thickness of the IMCs on the upper and lower interfaces of the Cu/SACZ/Cu joints increased accordingly. Compared with the as-received joints, the thickness of the upper and lower interfaces IMCs of the soldering aged time for 24 h increased by 404.7% and 505.5% at 150oC, respectively. The IMCs formation tendency and the IMCs growth rate of the lower interface are larger than those of the upper interface because the soldering seam near the IMCs at the upper and lower interfaces of the as-received joints were mostly white SAC0307 balls black Zn-particles, respectively. The growth activation energy of IMCs in the upper and lower interfaces is about 89.21 and 55.11 kJ/mol, respectively. Under the same aging time, with the increase of the aging temperature, the shear strength of Cu/SACZ/Cu joints did not change significantly at first before 150oC. When the aging temperature reached 150oC, the shear strength of the joints decreased significantly; the shear strength of the joints was the smallest at 150oC for 24 h, which was 39.4% lower than that of the as-received joints because the oxidation degree of Zn particles in the joint with the increase of aging temperature and time. Originality/value Cu/Cu joints were successfully achieved under ultrasonic-assisted at low-temperature.