A 1-16b Reconfigurable 80Kb 7T SRAM-Based Digital Near-Memory Computing Macro for Processing Neural Networks

被引:12
|
作者
Kim, Hyunjoon [1 ]
Mu, Junjie [1 ]
Yu, Chengshuo [1 ]
Kim, Tony Tae-Hyoung [1 ]
Kim, Bongjin [2 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
Random access memory; Computer architecture; Common Information Model (computing); Registers; Adders; Logic gates; Throughput; SRAM; vector matrix multiplication; multiply-and-accumulate; PIM; CIM; digital near-memory computing; IN-MEMORY; ARCHITECTURE; PRECISION;
D O I
10.1109/TCSI.2022.3232648
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work introduces a digital SRAM-based near memory compute macro for DNN inference, improving on-chip weight memory capacity and area efficiency compared to state-of-the-art digital computing-in-memory (CIM) macros. A 20 x 256.1-16b reconfigurable digital computing near memory (NM) macro is proposed, supporting a reconfigurable 1-16b precision through the bit-serial computing scheme and the weight and input gating architecture for sparsity-aware operations. Each reconfigurable column MAC comprises 16x custom designed 7T SRAM bitcells to store 1-16b weights, a conventional 6T SRAM for zero weight skip control, a bitwise multiplier, and a full adder with a register for partial-sum accumulations. 20x parallel partial-sum outputs are post-accumulated to generate a sub-partitioned output feature map, which will be concatenated to produce the final convolution result. Besides, pipelined array structure improves the throughput of the proposed macro. The proposed near-memory computing macro implements an 80Kb binary weight storage in a 0.473mm(2) die area using 65nm. It presents the area/energy efficiency of 4329-270.6 GOPS/mm(2) and 315.07-1.23TOPS/W at 1-16b precision.
引用
收藏
页码:1580 / 1590
页数:11
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