High-Performance Organic Photosynaptic Transistors Using Donor-Acceptor Type and Crosslinked Core-Shell Nanoparticles as a Floating Gate Electret

被引:5
|
作者
Yang, Wei-Chen [1 ,2 ]
Ercan, Ender [1 ,2 ]
Lin, Yan-Cheng [2 ,3 ]
Chen, Wei-Cheng [1 ,2 ]
Watanabe, Yu [4 ]
Nakabayashi, Kazuhiro [4 ]
Lin, Bi-Hsuan [5 ]
Lo, Chen-Tsyr [4 ]
Mori, Hideharu [4 ]
Chen, Wen-Chang [1 ,2 ]
机构
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Adv Res Ctr Green Mat Sci & Technol, Taipei 10617, Taiwan
[3] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
[4] Yamagata Univ, Grad Sch Organ Mat Sci, Dept Organ Mat Sci, Yonezawa, Yamagata 9928510, Japan
[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
关键词
artificial synapses; benzothiazole; naphthalene-diimide (NDI); phototransistors; Suzuki coupling;
D O I
10.1002/adom.202202110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photosynaptic transistor is considered to be a potential candidate for breaking the von Neumann bottleneck in photo-communication field. Herein, a series of donor-acceptor type and crosslinked core-shell nanoparticles are designed and applied in phototransistors as a charge-trapping electret. The outer shell is composed of poly(ethylene glycol) methyl ether methacrylate (PEGMA); while the inner core comprises donors of thiophene and bithiophene (2T) and acceptors of benzothiazole (BT), naphthalenediimide (NDI), and hexafluorobenzene-naphthalenediimide (FB-NDI). It is found that the core-shell and donor-acceptor design play an important role in the charge trapping, photoresponse, and the corresponding device performance. Accordingly, the phototransistor comprising the crosslinked core-shell nanoparticles with a donor of 2T and an acceptor of BT (PV2T-BT) produced the highest memory ratio of 10(5) over 10(4) s at a high operating voltage of -40 V. Meanwhile, the same device presented the highest paired-pulse facilitation ratio of 168% at a medium operating voltage of -1 V, and an ultra-low energy consumption of 0.0324 fJ at a low operating voltage of -1 mu V. The findings in this study provide a new perspective on material design for phototransistor devices.
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页数:10
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