Controlled Growth of Semiconductor Alloy/Ferromagnetic Insulator (GeBi/Bi:Thulium Iron Garnet (TmIG)) Spin Heterojunction and Development of Quantum Logic Device

Replacing heavy metal and heavy metal alloy films witha semiconductorthin film, to form a semiconductor/ferromagnetic insulator spin heterojunctionhas always been an international research hotspot. This article reportson a Ge1-x Bi x /Bi:thulium iron garnet (TmIG) spin heterojunction. It wasfound that Ge1-x Bi x (x = 0.06-0.22) semiconductoralloy films and Bi3+-doped control Tm3-y Bi y Fe4.3Ga0.7O12 (Bi:TmIG, y = 0.2-1.0)films can enhance the spin-orbit coupling (SOC) strength, improvingthe abnormal spin Hall effect (ASHE) and the spin Hall magnetoresistance(R (H)) switch characteristics. As x varies from 0.06 to 0.22, it is noticed that the spinmixing conductance considerably increases. Because Bi ions have theability to control the SOC strength, the 5-10 nm GeBi semiconductorthin film with the Bi-ion-doped Bi:TmIG film can realize a spin magneticmoment reversal and then drive the heterojunction magnetic momentswitching effect, and the spin currents injected across this interfacelead to deterministic magnetization reversal at an ultralow currentdensity of 1.82 x 10(6) mA/cm(2). This hassignificant practical applications in the design and implementationof spin quantum logic devices based on semiconductor processes, layinga material foundation for the development of quantum logic devices.