Buried Interface Engineering Enables Efficient, Scalable, and Stable Inverted Perovskite Solar Cells

被引:1
|
作者
Wang, Luqi [1 ]
Wang, Chao [1 ]
Li, Jing [1 ]
Geng, Cong [1 ]
Mo, Yanping [1 ]
Li, Hanxiao [1 ]
Bu, Tongle [1 ]
Tong, Jinhui [1 ]
Cheng, Yi-Bing [1 ,2 ]
Huang, Fuzhi [1 ,2 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Foshan Xianhu Lab Adv Energy Sci & Technol, Guangdong Lab, Foshan 528216, Peoples R China
基金
中国国家自然科学基金;
关键词
crystallinity; defect passivation; interface engineering; inverted perovskite solar cells; scalability; PASSIVATION; GROWTH; 23-PERCENT;
D O I
10.1002/solr.202300144
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), as an extensively used hole transport material in inverted perovskite solar cells (PSCs), has given reason for concern due to its hydrophobicity for a long time. Herein, buried interface engineering is applied for the scalable deposition of perovskite films by introducing an amphiphilic molecule hexadecyltrimethylammonium chloride on the PTAA surface, which improves the interfacial wettability of the perovskite precursor solution on the organic hole transport layer (HTL), facilitates the nucleation and growth of perovskites, and reduces the nonradiative recombination at the perovskite/HTL interface. As a result, all photovoltaic parameters of the inverted PSCs are improved significantly. The champion devices demonstrate power conversion efficiencies (PCEs) of 22.04% and 20.47% with aperture areas of 0.148 and 1.0 cm(2), respectively. Moreover, the encapsulated 1.0 cm(2) device exhibits excellent stability and maintains over 70% of its initial PCE after 1200 h under continuous 1 sun illumination at 65 degrees C in a nitrogen environment.
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页数:8
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