Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation

被引:1
|
作者
Xu, Yimeng [1 ,2 ,3 ]
Han, Xu [1 ,2 ,3 ]
Xu, Weidong [2 ]
Ye, Caiyang [1 ,2 ,3 ]
Dai, Ziyi [2 ]
Feng, Xianjin [2 ]
Qian, Kai [1 ,2 ,3 ]
机构
[1] Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
[2] Shandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R China
[3] Shandong Univ, Suzhou Res Inst, Suzhou 215123, Peoples R China
基金
中国国家自然科学基金;
关键词
LAYER; HFO2;
D O I
10.1063/5.0180651
中图分类号
O59 [应用物理学];
学科分类号
摘要
Neuromorphic computing that emulates brain behaviors can address the challenge of von Neumann bottleneck and is one of the crucial compositions of next-generation computing. Here, the polynary oxide of amorphous InAlZnO (a-IAZO)-based memristor is employed as electronic synapse with essential properties of biological synapse, including spiking timing-dependent plasticity, paired-pulse facilitation, long-term depression/potentiation, and Pavlov associative memory. Especially, the a-IAZO memristor properties are quite sensitive to the oxygen vacancy content, which exhibit stable switching and narrow distribution of Set/Reset voltage due to the oxygen vacancy content decrease after high-temperature annealing in air, showing promise for memristor performance enhancement. This work promotes the development of high-performance memristors with polynary oxide for neuromorphic computing and opens a path for a-IAZO film application in optoelectronics.
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收藏
页数:8
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