Exploring thermally stable metal-oxide/SiO2 stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response

被引：2

作者：

Asanuma, Shutaro ^{[1
]}

Sumita, Kyoko ^{[1
]}

Miyaguchi, Yusuke ^{[2
]}

Horita, Kazumasa ^{[2
]}

Masuda, Takeshi ^{[2
]}

Jimbo, Takehito ^{[2
]}

Miyata, Noriyuki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] ULVAC Inc, Inst Adv Technol, 1220-1 Suyama, Susono 4101231, Japan

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 06期

关键词：

interface dipole modulation; neuromorphic; synaptic; atomic layer deposition; metal oxide semiconductor memory; CRYSTALLIZATION;

D O I：

10.35848/1882-0786/acdd4e

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated Al2O3/SiO2 stack structures with atomically thin Ti oxide layers at the interfaces using atomic layer deposition and investigated the capacitance-voltage (C-V) hysteresis of the metal-oxide-semiconductor (MOS) capacitors. We studied the effect of post-deposition annealing in the temperature range of 150 & DEG;C-500 & DEG;C on the C-V hysteresis and found that the Al2O3/SiO2-based stacks are thermally stable compared to ZrO2/SiO2- and HfO2/SiO2-based stacks. Using Al2O3/SiO2-based stacks, we investigated the impact of oxide layer thickness and gate electrode materials and studied pulse-induced current changes in MOS field-effect transistors.

引用

页数：5

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