Auger-suppression in barrier-blocking HgCdTe long-wavelength infrared detector

Throughout, both the Auger-suppression effect and barrier-blocking devices have been regarded as highly promising solutions for achieving high- operation-temperature (HOT) in long-wave infrared (LWIR) HgCdTe devices. Herein, two structural designs of pBin-type barrier-blocking LWIR HgCdTe devices were introduced and analyzed, accompanied by an extensive investigation into the Auger-suppression effect within the designed structures. It was observed that this unique structural approach has the potential to enhance the operational temperature of HgCdTe barrier-blocking devices. A strong dependency of the Auger suppression effect on the doping concentration within the absorption region was revealed through the analysis of absorption region structural parameters. Furthermore, the analysis of band structures for different design configurations demonstrated that the structural design involving p-type barrier layers can effectively position the barrier at the conduction band, eliminating the reliance on valence band-offset with respect to barrier layer structural parameters. Consequently, the structural design and fabrication processes of the devices were significantly simplified. These discoveries offer theoretical guidance for the simplification of structural design and fabrication processes in HOT barrier-blocking HgCdTe devices, emphasizing the potential of pBin-type structures in enhancing device performance and achieving elevated operational temperatures.