Carrier confinement and interband optical transitions in lead chalcogenide quantum wells, nanosheets, and nanoplatelets

被引：1
|
作者：
Goupalov, Serguei V. [1 ,2 ]
机构：
[1] Jackson State Univ, Dept Phys, Jackson, MS 39217 USA
[2] AF Ioffe Physico Tech Inst, 26 Polytech Skaya, St Petersburg 194021, Russia
来源：
NANOSCALE | 2023年 / 15卷 / 03期
关键词：
PBS NANOSHEETS; HEIGHT;
D O I：
10.1039/d2nr02942a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Analytic equation for energy dispersion of electronic states in lead chalcogenide nanosheets is derived within an effective mass model. Selection rules for interband optical transitions are analyzed and expressions for interband optical matrix elements are obtained. It is shown that the main effect of the lateral confinement in nanoplatelets can be accounted for in terms of the quantized in-plane wave vector.
引用
收藏
页码：1230 / 1235
页数：6
相关论文
共 50 条
  • [1] Interband and Intraband Optical Transitions in Mercury Chalcogenide Colloidal Quantum Dots
    Tang, Xin
    Wu, Guangfu
    Lai, King Wai Chiu
    [J]. 2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2017, : 641 - 644
  • [2] Evidence of quantum confinement effects on interband optical transitions in Si nanocrystals
    Alonso, M. I.
    Marcus, I. C.
    Garriga, M.
    Goni, A. R.
    Jedrzejewski, J.
    Balberg, I.
    [J]. PHYSICAL REVIEW B, 2010, 82 (04)
  • [3] INTERBAND OPTICAL-TRANSITIONS IN QUANTUM-WELLS IN NONIDEAL INTERFACES
    RAICHEV, OE
    VASKO, FT
    [J]. PHYSICAL REVIEW B, 1994, 50 (08): : 5462 - 5472
  • [4] Optical gains and interband transitions of CdTe/ZnTe single quantum wells
    You, J. H.
    Woo, J. T.
    Lee, D. U.
    Kim, T. W.
    Yoo, K. H.
    Park, H. L.
    [J]. NUSOD 2009: 9TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, PROCEEDINGS, 2009, : 19 - +
  • [5] Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals
    Spoor, Frank C. M.
    Grimaldi, Gianluca
    Delerue, Christophe
    Evers, Wiel H.
    Crisp, Ryan W.
    Geiregat, Pieter
    Hens, Zeger
    Houtepen, Arjan J.
    Siebbeles, Laurens D. A.
    [J]. ACS NANO, 2018, 12 (05) : 4796 - 4802
  • [6] Broadening of interband transitions in InGaN quantum wells
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Siekacz, M.
    Cywinski, G.
    Skierbiszewski, C.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2282 - 2284
  • [7] INTERBAND OPTICAL-TRANSITIONS IN DOUBLE-QUANTUM WELLS WITH NONSYMMETRICAL SCATTERING
    RAICHEV, OE
    VASKO, FT
    [J]. PHYSICAL REVIEW B, 1995, 51 (11): : 7116 - 7122
  • [8] Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
    Vorobjev, LE
    Danilov, SN
    Gluhovskoy, AV
    Zerova, VL
    Zibik, EA
    Panevin, VY
    Firsov, DA
    Shalygin, VA
    Andreev, AD
    Volovik, BV
    Zhukov, AE
    Ledentsov, NN
    Livshits, DA
    Ustinov, VM
    Shernyakov, YM
    Tsatsulnikov, AF
    Weber, A
    Grundmann, M
    Schmidt, SR
    Seilmeier, A
    Towe, E
    Pal, D
    [J]. NANOTECHNOLOGY, 2001, 12 (04) : 462 - 465
  • [9] Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
    Vorobjev, LE
    Danilov, SN
    Gluhovskoy, AV
    Zerova, VL
    Zibik, EA
    Panevin, VY
    Firsov, DA
    Shalygin, VA
    Andreev, AD
    Volovik, BV
    Zhukov, AE
    Ledentsov, NN
    Livshits, DA
    Ustinov, VM
    Shernyakov, YM
    Tsatsulnikov, AF
    Weber, A
    Grundmann, M
    Schmidt, SR
    Seilmeier, A
    Towe, E
    Pal, D
    [J]. IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (02): : 231 - 235
  • [10] Interband transitions in GaInNAs/GaAs single quantum wells
    Manasreh, MO
    Friedman, DJ
    Ma, WQ
    Workman, CL
    George, CE
    Salamo, GJ
    [J]. PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 647 - 652
12345