Dopant concentration dependent room temperature ferromagnetism in crystalline Sc doped AlN thin films

被引：0
|
作者：
Zhu, Zishu [1 ]
Ou, Zhanpeng
Chen, Yanpu
Zhao, JiaXin
Zhu, Wei
Ma, Pingping
Lou, Liren
Pan, Bicai
机构：
[1] Univ Sci & Technol China, Chinese Acad Sci, Key Lab Strongly Coupled Matter Phys, Hefei 230026, Anhui, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 961卷
基金：
中国国家自然科学基金;
关键词：
Ferromagnetic films; Doped AlN films; RKKY interaction; Atomic vacancies; 1ST-PRINCIPLES; MAGNETISM;
D O I：
10.1016/j.jallcom.2023.170986
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, high uniformity AlN thin films with varying Sc doping concentration levels were deposited on Ti (120 nm)/Si substrates. The impact of Sc doping ratio and annealing temperature on the magnetic properties of Al1-xScxN were studied. This work suggests that the origin of ferromagnetism of Al1-xScxN is the Al vacancies introduced by Sc ions. The amount of Al vacancies grew as the Sc doping ratio increased. According to the results of spin-polarized density of states (DOS), it is hypothesized that when the concentration of Al vacancies in Al1-xScxN grows, polarized itinerant electrons exist and result a magnetic phase change. (c) 2023 Elsevier B.V. All rights reserved.
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页数：9
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