SPECIAL TOPIC-The 70th anniversary of National University of Defense Technology Research progress of intrinsic magnetic insulator

被引:0
|
作者
Xie, Xiang-Nan [1 ]
Li, Cheng [1 ]
Zeng, Jun-Wei [2 ]
Zhou, Shen [1 ]
Jiang, Tian [1 ]
机构
[1] Natl Univ Def Technol, Inst Quantum Informat, Coll Sci, Changsha 410073, Peoples R China
[2] Natl Univ Def Technol, Inst Quantum Informat, Coll Comp, State Key Lab High Performance Comp, Changsha 410073, Peoples R China
关键词
intrinsic magnetic topological insulators; MnBi2Te4; topological quantum states; ANTIFERROMAGNETIC TOPOLOGICAL INSULATOR; STATE; SEMICONDUCTOR; SPINTRONICS; SIGNATURES; BI2SE3; GAP;
D O I
10.7498/aps.72.20230704
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The interaction between non-trivial topological states and the magnetic order of intrinsic magnetic topological insulators gives rise to various exotic physical properties, including the quantum anomalous Hall effect and axion insulator. These materials possess great potential applications in low-power topological spintronic devices and topological quantum computation. Since the first intrinsic magnetic topological insulator, MnBi2Te4, was discovered in 2019, this material system has received significant attention from researchers and sparked a research boom. This paper begins with discussing the fundamental properties of MnBi(2)Te(4)and then turns to important research findings related to this intrinsic magnetic topological insulator. Specifically, it focuses on the quantum anomalous Hall effect, axion insulating state, and Majorana zero energy mode exhibited by the MnBi(2)Te(4)series. Furthermore, this paper highlights other research directions and current challenges associated with this material system. Finally, this paper provides a summary and outlook for future research on MnBi2Te4, aiming to offer valuable references for researchers in related fields.
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页数:20
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