Current-induced switching of photonic spin Hall effect in a magnetic insulator based on spin-orbit torques

被引:0
|
作者
Tang, Yujie [1 ]
Liang, Xiao [1 ]
Tang, Tingting [1 ]
Bi, Lei [2 ,3 ]
Li, Chaoyang [4 ]
Kang, Tongtong [2 ,3 ]
Qin, Jun [2 ,3 ]
Li, Jie [1 ]
He, Yu [1 ]
Shen, Ke [1 ]
Xu, Jingduo [1 ]
机构
[1] Chengdu Univ Informat Technol, Coll Optoelect Engn, Chengdu, Peoples R China
[2] Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Mat, Sichuan, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
[4] Hainan Univ, State Key Lab Marine Resource Utilizat South China, Haikou, Peoples R China
基金
中国博士后科学基金; 美国国家科学基金会;
关键词
Beam shift - Charge current - Current induced switching - Electronic spins - Magnetic insulator - Optoelectronic applications - Pt electrode - Pt-electrodes - Spin orbits - Thin-films;
D O I
10.1063/5.0140716
中图分类号
O59 [应用物理学];
学科分类号
摘要
The photonic spin Hall effect (PSHE) is analogous to the electronic spin Hall effect, which has substantial potential for optoelectronic applications. However, PSHE-based devices are rarely studied, and manipulating the PSHE by charge current has remained elusive thus far. In this paper, we demonstrate current-induced switching of PSHE in the Ce1Dy2Al0.42Fe4.58O12 thin film capping with Pt electrodes, which is mediated by spin-orbit torques at the Pt/Ce1Dy2Al0.42Fe4.58O12 interface. The results show that the transverse beam shifts related to the PSHE can be reversed by applying a small order of magnitude charge current (similar to 10(8) A center dot m(-2)) to the Pt layer in opposite directions, which predicts low dissipation in our proposed heterostructure. In addition, by applying an in-plane magnetic field, the saturation beam shifts can be increased, which can significantly enhance the switching ratio.
引用
收藏
页数:7
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